公开(公告)号：US20140227890A1

公开(公告)日：2014-08-14

申请号：US14253570

申请日：2014-04-15

Applicant: ULTRATECH, INC.

Inventor： Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

IPC: H01L21/263

CPC classification number: H01L21/2636 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract translation: 提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。 可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。 可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。 这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

公开(公告)号：US20130278109A1

公开(公告)日：2013-10-24

申请号：US13863283

申请日：2013-04-15

Applicant: ULTRATECH, INC.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/02 ,  G21H1/06

CPC classification number: G21H1/02 ,  G21H1/06

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract translation: 用于移动设备和移动应用的贝塔伏特电源包括同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率来在其使用寿命期间操作移动设备。

公开(公告)号：US10249491B2

公开(公告)日：2019-04-02

申请号：US15943115

申请日：2018-04-02

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: C23C16/30 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  C23C16/455 ,  H01L21/324

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US20190006189A1

公开(公告)日：2019-01-03

申请号：US16106850

申请日：2018-08-21

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/324 ,  H01L21/268 ,  H01L21/67

Abstract: Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.

公开(公告)号：US09960036B2

公开(公告)日：2018-05-01

申请号：US15457460

申请日：2017-03-13

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: H01L29/15 ,  H01L31/0256 ,  H01L21/02 ,  H01L21/324 ,  H01L29/20 ,  C30B25/18 ,  C30B29/06 ,  C30B29/40

CPC classification number: H01L21/0251 ,  C23C16/303 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694 ,  H01L21/3245 ,  H01L29/2003

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US09929011B2

公开(公告)日：2018-03-27

申请号：US15597680

申请日：2017-05-17

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170250070A1

公开(公告)日：2017-08-31

申请号：US15597680

申请日：2017-05-17

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/02 ,  B23K26/12 ,  B23K26/122 ,  B23K26/03 ,  B23K26/073 ,  H01L21/268 ,  H01L29/20

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170213718A1

公开(公告)日：2017-07-27

申请号：US15457460

申请日：2017-03-13

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  C30B29/06 ,  H01L21/324 ,  H01L29/20

CPC classification number: H01L21/0251 ,  C23C16/303 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694 ,  H01L21/3245 ,  H01L29/2003

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US09711361B2

公开(公告)日：2017-07-18

申请号：US15437055

申请日：2017-02-20

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: B23K26/00 ,  H01L21/268 ,  H01L21/263 ,  B23K26/352 ,  B23K26/066 ,  B23K103/00

CPC classification number: H01L21/268 ,  B23K26/0626 ,  B23K26/066 ,  B23K26/352 ,  B23K2103/56 ,  H01L21/2636

Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.

公开(公告)号：US09436103B2

公开(公告)日：2016-09-06

申请号：US14281291

申请日：2014-05-19

Applicant: Ultratech, Inc.

Inventor： Peiqian Zhao ,  Emily M. True ,  Raymond Ellis ,  Andrew M. Hawryluk

IPC: G03F7/20 ,  G02B17/08

CPC classification number: G03F7/70958 ,  G02B17/0892 ,  G03F7/7015 ,  G03F7/70225

Abstract: A Wynne-Dyson projection lens for use in an ultraviolet optical lithography system is disclosed, wherein the projection lens is configured to have reduced susceptibility to damage from ultraviolet radiation. The projection lens utilizes lens elements that are made of optical glasses that are resistant to damage from ultraviolet radiation, but that also provide sufficient degrees of freedom to correct aberrations. The glass types used for the lens elements are selected from the group of optical glasses consisting of: fused silica, S-FPL51Y, S-FSL5Y, BSM51Y and BAL15Y.