公开(公告)号：US20180166348A1

公开(公告)日：2018-06-14

申请号：US15834614

申请日：2017-12-07

Applicant: Ultratech, Inc.

Inventor： Paul M. Bischoff ,  Emily M. True ,  Raymond Ellis ,  A.J. Crespin

IPC: H01L21/66 ,  H01L21/027 ,  H01L23/00 ,  H01L21/67 ,  H01L21/68 ,  G03F7/20 ,  G03F1/36

CPC classification number: H01L22/20 ,  G03F1/36 ,  G03F7/20 ,  G03F9/7034 ,  G03F9/7046 ,  H01L21/0274 ,  H01L21/67259 ,  H01L21/681 ,  H01L22/12 ,  H01L23/00 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L24/96 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025

Abstract: A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.

公开(公告)号：US10269662B2

公开(公告)日：2019-04-23

申请号：US15834614

申请日：2017-12-07

Applicant: Ultratech, Inc.

Inventor： Paul M. Bischoff ,  Emily M. True ,  Raymond Ellis ,  A. J. Crespin

IPC: H01L21/66 ,  H01L23/00 ,  H01L21/67 ,  H01L21/68 ,  G03F7/20 ,  G03F1/36 ,  H01L21/027 ,  G03F9/00

Abstract: A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.

公开(公告)号：US09436103B2

公开(公告)日：2016-09-06

申请号：US14281291

申请日：2014-05-19

Applicant: Ultratech, Inc.

Inventor： Peiqian Zhao ,  Emily M. True ,  Raymond Ellis ,  Andrew M. Hawryluk

IPC: G03F7/20 ,  G02B17/08

CPC classification number: G03F7/70958 ,  G02B17/0892 ,  G03F7/7015 ,  G03F7/70225

Abstract: A Wynne-Dyson projection lens for use in an ultraviolet optical lithography system is disclosed, wherein the projection lens is configured to have reduced susceptibility to damage from ultraviolet radiation. The projection lens utilizes lens elements that are made of optical glasses that are resistant to damage from ultraviolet radiation, but that also provide sufficient degrees of freedom to correct aberrations. The glass types used for the lens elements are selected from the group of optical glasses consisting of: fused silica, S-FPL51Y, S-FSL5Y, BSM51Y and BAL15Y.

公开(公告)号：US20150331326A1

公开(公告)日：2015-11-19

申请号：US14281291

申请日：2014-05-19

Applicant: Ultratech, Inc.

Inventor： Peiqian Zhao ,  Emily M. True ,  Raymond Ellis ,  Andrew M. Hawryluk

IPC: G03F7/20 ,  G02B13/22 ,  G02B17/08

CPC classification number: G03F7/70958 ,  G02B17/0892 ,  G03F7/7015 ,  G03F7/70225

Abstract: A Wynne-Dyson projection lens for use in an ultraviolet optical lithography system is disclosed, wherein the projection lens is configured to have reduced susceptibility to damage from ultraviolet radiation. The projection lens utilizes lens elements that are made of optical glasses that are resistant to damage from ultraviolet radiation, but that also provide sufficient degrees of freedom to correct aberrations. The glass types used for the lens elements are selected from the group of optical glasses consisting of: fused silica, S-FPL51Y, S-FSL5Y, BSM51Y and BAL15Y.

Abstract translation: 公开了一种用于紫外线光刻系统的Wynne-Dyson投影透镜，其中投影透镜被配置为具有降低的对紫外线辐射损伤的敏感性。 投影透镜使用由光学眼镜制成的透镜元件，其能够抵抗来自紫外线辐射的损伤，但也提供足够的自由度来校正像差。 用于透镜元件的玻璃类型选自由熔融石英，S-FPL51Y，S-FSL5Y，BSM51Y和BAL15Y组成的一组光学眼镜。