公开(公告)号：US08691598B1

公开(公告)日：2014-04-08

申请号：US13706397

申请日：2012-12-06

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter ,  David Gaines ,  Joseph Lee ,  Paolo Zambon

IPC: H01L21/00

CPC classification number: B23K26/083 ,  B23K26/0006 ,  B23K26/034 ,  B23K26/0732 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  C30B33/04 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248

Abstract: Systems and methods for performing semiconductor laser annealing using dual loop control are disclosed. The first control loop operates at a first frequency and controls the output of the laser and controls the 1/f laser noise. The second control loop also controls the amount of output power in the laser and operates at second frequency lower than the first frequency. The second control loop measures the thermal emission of the wafer over an area the size of one or more die so that within-die emissivity variations are average out when determining the measured annealing temperature. The measured annealing temperature and an annealing temperature set point are used to generate the control signal for the second control loop.

Abstract translation: 公开了使用双回路控制进行半导体激光退火的系统和方法。 第一个控制回路以第一个频率工作，控制激光器的输出并控制1 / f激光噪声。 第二控制回路还控制激光器中的输出功率量并且在比第一频率低的第二频率下工作。 第二控制回路测量在一个或多个管芯的尺寸的区域上的晶片的热发射，使得当确定测量的退火温度时，在管芯内的发射率变化是平均的。 测量退火温度和退火温度设定点用于产生第二控制回路的控制信号。