SUBSTRATE PROCESSING WITH REDUCED WARPAGE AND/OR CONTROLLED STRAIN
    2.
    发明申请
    SUBSTRATE PROCESSING WITH REDUCED WARPAGE AND/OR CONTROLLED STRAIN 有权
    具有降低的温度和/或控制应变的基板加工

    公开(公告)号:US20130273751A1

    公开(公告)日:2013-10-17

    申请号:US13913045

    申请日:2013-06-07

    Abstract: Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to reduce substrate warpage. When the substrates are semiconductor wafers having microelectronic devices, the orientation angles may be selected to produce controlled strain and to improve electronic performance of the devices.

    Abstract translation: 提供了用于处理以一个或多个选定取向角度扫描激光束的基板表面的系统和方法。 可以选择取向角或角度以减少基板翘曲。 当衬底是具有微电子器件的半导体晶片时,可以选择取向角以产生受控应变并改善器件的电子性能。

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