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公开(公告)号：US20230116522A1
公开(公告)日：2023-04-13
申请号：US18079884
申请日：2022-12-13
Applicant: Unimicron Technology Corp.
Inventor： Ming-Ru Chen , Tzyy-Jang Tseng , Cheng-Chung Lo
Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.
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公开(公告)号：US11923350B2
公开(公告)日：2024-03-05
申请号：US18079884
申请日：2022-12-13
Applicant: Unimicron Technology Corp.
Inventor： Ming-Ru Chen , Tzyy-Jang Tseng , Cheng-Chung Lo
CPC classification number: H01L25/167 , H01L33/62 , H01L33/56 , H01L2933/0066
Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.
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公开(公告)号：US20220231004A1
公开(公告)日：2022-07-21
申请号：US17714121
申请日：2022-04-05
Applicant: Unimicron Technology Corp.
Inventor： Ming-Ru Chen , Tzyy-Jang Tseng , Cheng-Chung Lo
Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.
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公开(公告)号：US11335670B2
公开(公告)日：2022-05-17
申请号：US16907183
申请日：2020-06-20
Applicant: Unimicron Technology Corp.
Inventor： Ming-Ru Chen , Tzyy-Jang Tseng , Cheng-Chung Lo
Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.
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公开(公告)号：US20210251107A1
公开(公告)日：2021-08-12
申请号：US17017702
申请日：2020-09-11
Applicant: Unimicron Technology Corp.
Inventor： Ra-Min Tain , Pu-Ju Lin , Cheng-Chung Lo , Chi-Hai Kuo , Cheng-Ta Ko , Tzyy-Jang Tseng , John Hon-Shing Lau
Abstract: A vapor chamber structure includes a thermally conductive housing, a capillary structure layer, a grid structure layer, and a working fluid. The thermally conductive housing has a sealed chamber, where a pressure in the sealed chamber is lower than a standard atmospheric pressure. The capillary structure layer is disposed in the sealed chamber. The grid structure layer is disposed in the sealed chamber and arranged along a first direction. A size of the grid structure layer is less than or equal to a size of the capillary structure layer. The working fluid fills the sealed chamber.
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Patent Agency Ranking
公开(公告)号：US20180005933A1
公开(公告)日：2018-01-04
申请号：US15201602
申请日：2016-07-04
Applicant: Unimicron Technology Corp.
Inventor： Chien-Te Wu , Chien-Tsai Li , Cheng-Chung Lo
IPC: H01L23/498 , H05K3/12 , H05K1/11 , H01L21/48 , H05K1/03 , H01L21/683 , H05K3/40 , H05K3/00
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/6833 , H01L23/49822 , H01L23/49827 , H05K1/0306 , H05K1/115 , H05K3/002 , H05K3/0023 , H05K3/0029 , H05K3/1275 , H05K3/4007 , H05K3/4038 , Y10T29/49165
Abstract: Provided is a manufacturing method of a circuit board structure including steps as below. A glass film is provided on an electrostatic chuck (E-chuck). A plurality of first conductive vias are formed in the glass film. A first circuit layer is formed on an upper surface of the glass film, such that the first circuit layer is electrically connected with the first conductive vias. A first polymer layer is formed on the first circuit layer. The first polymer layer covers a surface of the first circuit layer and the upper surface of the glass film. A plurality of second conductive vias are formed in the first polymer layer. A second circuit layer is formed on the first polymer layer, such that the second circuit layer is electrically connected with the second conductive vias. The E-chuck is removed.
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公开(公告)号：US11715715B2
公开(公告)日：2023-08-01
申请号：US17200922
申请日：2021-03-15
Applicant: Unimicron Technology Corp.
Inventor： Tzyy-Jang Tseng , Ming-Ru Chen , Cheng-Chung Lo , Chin-Sheng Wang , Wen-Sen Tang
IPC: H01L23/00 , H01L25/075 , H01L27/12 , H01L33/62
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L25/0753 , H01L27/1214 , H01L33/62 , H01L2224/03312 , H01L2224/03552 , H01L2224/0401 , H01L2224/0518 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05193 , H01L2224/11464 , H01L2224/13013 , H01L2224/13014 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2924/12041 , H01L2924/1426 , H01L2933/0066
Abstract: A manufacturing method of a metal bump structure is provided. A driving base is provided. At least one pad and an insulating layer are formed on the driving base. The pad is formed on an arrangement surface of the driving base and has an upper surface. The insulating layer covers the arrangement surface of the driving base and the pad, and exposes a part of the upper surface of the pad. A patterned metal layer is formed on the upper surface of the pad exposed by the insulating layer, and extends to cover a part of the insulating layer. An electro-less plating process is performed to form at least one metal bump on the patterned metal layer. A first extension direction of the metal bump is perpendicular to a second extension direction of the driving base.
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公开(公告)号：US20220238471A1
公开(公告)日：2022-07-28
申请号：US17200922
申请日：2021-03-15
Applicant: Unimicron Technology Corp.
Inventor： Tzyy-Jang Tseng , Ming-Ru Chen , Cheng-Chung Lo , Chin-Sheng Wang , Wen-Sen Tang
IPC: H01L23/00 , H01L25/075 , H01L27/12 , H01L33/62
Abstract: A manufacturing method of a metal bump structure is provided. A driving base is provided. At least one pad and an insulating layer are formed on the driving base. The pad is formed on an arrangement surface of the driving base and has an upper surface. The insulating layer covers the arrangement surface of the driving base and the pad, and exposes a part of the upper surface of the pad. A patterned metal layer is formed on the upper surface of the pad exposed by the insulating layer, and extends to cover a part of the insulating layer. An electro-less plating process is performed to form at least one metal bump on the patterned metal layer. A first extension direction of the metal bump is perpendicular to a second extension direction of the driving base.
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公开(公告)号：US10070536B2
公开(公告)日：2018-09-04
申请号：US15201622
申请日：2016-07-05
Applicant: Unimicron Technology Corp.
Inventor： Chien-Tsai Li , Chien-Te Wu , Cheng-Chung Lo
Abstract: Provided is a manufacturing method of a circuit board structure including steps as below. A glass film is provided on an electrostatic chuck (E-chuck). A dicing process is performed, such that at least one slit is formed in the glass film. A plurality of first conductive vias are formed in the glass film. A first circuit layer is formed on the glass film. A polymer layer is formed on the first circuit layer. The polymer layer covers surfaces of the first circuit layer and the glass film. A plurality of second conductive vias are formed in the polymer layer. A second circuit layer is formed on the polymer layer, such that a first circuit board structure is formed. A singulation process is performed, such that the first circuit board structure is divided into a plurality of second circuit board structures.
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公开(公告)号：US09917046B2
公开(公告)日：2018-03-13
申请号：US15201602
申请日：2016-07-04
Applicant: Unimicron Technology Corp.
Inventor： Chien-Te Wu , Chien-Tsai Li , Cheng-Chung Lo
IPC: H01K3/10 , H01L23/498 , H01L21/683 , H05K1/03 , H05K3/00 , H05K1/11 , H05K3/12 , H05K3/40 , H01L21/48
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/6833 , H01L23/49822 , H01L23/49827 , H05K1/0306 , H05K1/115 , H05K3/002 , H05K3/0023 , H05K3/0029 , H05K3/1275 , H05K3/4007 , H05K3/4038 , Y10T29/49165
Abstract: Provided is a manufacturing method of a circuit board structure including steps as below. A glass film is provided on an electrostatic chuck (E-chuck). A plurality of first conductive vias are formed in the glass film. A first circuit layer is formed on an upper surface of the glass film, such that the first circuit layer is electrically connected with the first conductive vias. A first polymer layer is formed on the first circuit layer. The first polymer layer covers a surface of the first circuit layer and the upper surface of the glass film. A plurality of second conductive vias are formed in the first polymer layer. A second circuit layer is formed on the first polymer layer, such that the second circuit layer is electrically connected with the second conductive vias. The E-chuck is removed.
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