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    CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMORY DEVICES
    2.
    发明申请
    CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMORY DEVICES 有权
    非易失性可写存储器件中的导电金属氧化物结构

    公开(公告)号：US20140367629A1

    公开(公告)日：2014-12-18

    申请号：US14476604

    申请日：2014-09-03

    Applicant: Unity Semiconductor Corporation

    Inventor： Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: G11C13/0026 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C2013/0045 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/24 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

    Abstract translation: 公开了包括与导电金属氧化物（CMO）接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物，导电二元氧化物，多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场，可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。 存储器单元可以包括与存储元件电串联的非欧姆器件（NOD）。 存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间，该衬底层在衬底上制造，该衬底包括用于数据的有源电路 对数组层进行操作。

    Conductive metal oxide structures in non-volatile re-writable memory devices
    3.
    发明授权
    Conductive metal oxide structures in non-volatile re-writable memory devices 有权

    公开(公告)号：US10803935B2

    公开(公告)日：2020-10-13

    申请号：US16429411

    申请日：2019-06-03

    Applicant: Unity Semiconductor Corporation

    Inventor： Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    IPC: G11C13/00 ,  G11C11/56 ,  H01L27/24 ,  H01L45/00

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

    CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMORY DEVICES
    6.
    发明申请
    CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMORY DEVICES 审中-公开

    公开(公告)号：US20190371396A1

    公开(公告)日：2019-12-05

    申请号：US16429411

    申请日：2019-06-03

    Applicant: Unity Semiconductor Corporation

    Inventor： Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    IPC: G11C13/00 ,  G11C11/56 ,  H01L27/24 ,  H01L45/00

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

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