公开(公告)号：US10172558B2

公开(公告)日：2019-01-08

申请号：US15261648

申请日：2016-09-09

Applicant: University of Utah Research Foundation

Inventor： Sandeep Negi ,  Rajmohan Bhandari ,  Mobashir Hasan Shandi

IPC: A61B5/00 ,  B81B1/00 ,  B81C1/00 ,  A61B5/04 ,  A61N1/05 ,  C25D5/34 ,  C25D1/00 ,  C25D1/08

Abstract: A high aspect ratio shadow mask and a method of making and using the high aspect ratio shadow mask can provide multiple conductive trace pathways along high aspect ratio electrodes. The high aspect ratio shadow mask can include a substantially planar base layer and a plurality of hollow high aspect ratio projections extending from the substantially planar base layer. The high aspect ratio shadow mask can further include a plurality of openings along the hollow projections which define trace deposition patterns.

公开(公告)号：US20170071540A1

公开(公告)日：2017-03-16

申请号：US15261648

申请日：2016-09-09

Applicant: University of Utah Research Foundation

Inventor： Sandeep Negi ,  Rajmohan Bhandari ,  Mobashir Hasan Shandi

IPC: A61B5/00 ,  B81C1/00 ,  G03F7/20 ,  A61N1/05 ,  C25D5/34 ,  B81B1/00 ,  A61B5/04

CPC classification number: A61B5/685 ,  A61B5/04001 ,  A61B2562/0209 ,  A61B2562/046 ,  A61B2562/125 ,  A61N1/05 ,  A61N1/0502 ,  B81B1/008 ,  B81B2201/055 ,  B81C1/00111 ,  C25D1/003 ,  C25D1/08 ,  C25D5/34

Abstract: A high aspect ratio shadow mask and a method of making and using the high aspect ratio shadow mask can provide multiple conductive trace pathways along high aspect ratio electrodes. The high aspect ratio shadow mask can include a substantially planar base layer and a plurality of hollow high aspect ratio projections extending from the substantially planar base layer. The high aspect ratio shadow mask can further include a plurality of openings along the hollow projections which define trace deposition patterns.

Abstract translation: 高宽比荫罩和制造和使用高宽比荫罩的方法可以提供沿着高纵横比电极的多个导电迹线路径。 高宽比荫罩可以包括基本上平坦的基底层和从基本平坦的基底层延伸的多个中空高宽比突起。 高纵横比荫罩还可以包括沿着中空突起的多个开口，这些开口限定了微量沉积图案。