公开(公告)号：US11443928B2

公开(公告)日：2022-09-13

申请号：US17163523

申请日：2021-01-31

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01J37/32 ,  H01L21/302 ,  G01B11/06

Abstract: An etching apparatus and an etching method thereof are provided. An end point detector detects a light intensity at a specific wavelength for light generated when an etching process is performed on a material to be processed, and generates an end point detection signal. The material to be processed includes a material layer and at least one mask layer formed on the material layer. A control device determines an etching completion time of the mask layer according to the end point detection signal, calculates a thickness of the mask layer according to the etching completion time, and adjusts an etching time of the material layer according to the thickness of the mask layer.

公开(公告)号：US12171095B2

公开(公告)日：2024-12-17

申请号：US17689014

申请日：2022-03-08

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01L23/48 ,  H01L29/40 ,  H10B12/00

Abstract: A memory structure includes: a substrate including a memory array region and a peripheral circuit region; a plurality of bit line structures disposed in the memory array region of the substrate; a dummy bit line structure disposed on the substrate, wherein the dummy bit line structure is disposed in the memory array region and immediately adjacent to the peripheral circuit region; a plurality of contacts disposed between the bit line structures and in the memory array region; a dielectric layer disposed on the substrate and in the peripheral circuit region; and a protective structure disposed in the memory array region and immediately adjacent to the peripheral circuit region, wherein the protective structure includes the dummy bit line structure and a top surface of the protective structure is higher than top surfaces of the bit line structures.

公开(公告)号：US20220359173A1

公开(公告)日：2022-11-10

申请号：US17870794

申请日：2022-07-21

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01J37/32 ,  G01B11/06 ,  H01L21/302

Abstract: An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.

公开(公告)号：US11205574B2

公开(公告)日：2021-12-21

申请号：US16810135

申请日：2020-03-05

Applicant: Winbond Electronics Corp.

Inventor： Shuen-Hsiang Ke ,  Shih-Chieh Lin

IPC: H01L21/3205 ,  H01L21/308 ,  H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/48

Abstract: A method for forming a semiconductor memory structure includes forming a hard mask layer over a semiconductor substrate, etching the hard mask layer to form first mask patterns and second mask patterns, transferring the first and second mask patterns to the substrate to form semiconductor blocks, and thinning down the second mask element. After thinning down the second mask element, the thickness of the second mask elements is less than the thickness of the first mask elements. The method also includes forming a first capping layer to laterally extend over the first mask patterns and the second mask patterns, and etching the first capping layer and the second mask pattern to form contact openings.

公开(公告)号：US12249495B2

公开(公告)日：2025-03-11

申请号：US17870794

申请日：2022-07-21

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01L21/302 ,  G01B11/06 ,  H01J37/32

Abstract: An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.

公开(公告)号：US11665889B2

公开(公告)日：2023-05-30

申请号：US17523439

申请日：2021-11-10

Applicant: Winbond Electronics Corp.

Inventor： Shuen-Hsiang Ke ,  Shih-Chieh Lin

IPC: H01L27/10 ,  H01L21/308 ,  H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/48

CPC classification number: H10B12/488 ,  H01L21/02362 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/4885 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76897 ,  H10B12/482

Abstract: A method for forming a semiconductor memory structure includes forming a hard mask layer over a semiconductor substrate, etching the hard mask layer to form first mask patterns and second mask patterns, transferring the first and second mask patterns to the substrate to form semiconductor blocks, and thinning down the second mask element. After thinning down the second mask element, the thickness of the second mask elements is less than the thickness of the first mask elements. The method also includes forming a first capping layer to laterally extend over the first mask patterns and the second mask patterns, and etching the first capping layer and the second mask pattern to form contact openings.

公开(公告)号：US20220246410A1

公开(公告)日：2022-08-04

申请号：US17163523

申请日：2021-01-31

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01J37/32 ,  G01B11/06 ,  H01L21/302

Abstract: An etching apparatus and an etching method thereof are provided. An end point detector detects a light intensity at a specific wavelength for light generated when an etching process is performed on a material to be processed, and generates an end point detection signal. The material to be processed includes a material layer and at least one mask layer formed on the material layer. A control device determines an etching completion time of the mask layer according to the end point detection signal, calculates a thickness of the mask layer according to the etching completion time, and adjusts an etching time of the material layer according to the thickness of the mask layer.

公开(公告)号：US11315932B2

公开(公告)日：2022-04-26

申请号：US16884914

申请日：2020-05-27

Applicant: Winbond Electronics Corp.

Inventor： Shih-Chieh Lin ,  Shuen-Hsiang Ke

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method for forming a memory structure includes: providing a substrate including a memory array region and a peripheral circuit region; forming a plurality of bit line structures in the memory array region; forming a dielectric layer in the peripheral circuit region; forming a plurality of contacts between the bit line structures; depositing a protective layer on the substrate; depositing a hard mask layer on the protective layer; etching back the hard mask layer to form a hard mask spacer on the first top surface of the protective layer and immediately adjacent to the peripheral circuit region; and etching the protective layer with the hard mask spacer as an etching mask to leave a protective feature at the boundary between the memory array region and the peripheral circuit region.