公开(公告)号：US11521975B2

公开(公告)日：2022-12-06

申请号：US17244438

申请日：2021-04-29

Applicant: WINBOND ELECTRONICS CORP.

Inventor： Ying-Chu Yen

IPC: H01L27/108 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66

Abstract: A method for forming a semiconductor memory structure includes forming an isolation structure surrounding an active region in a substrate. The method also includes forming a first trench to separate the active region into a first active region and a second active region. The method also includes forming a bit line over the bottom portion of the first trench. The method also includes forming a word line surrounding the first active region and the second active region and over the bit line. The method also includes self-aligned forming a contact over the first active region and the second active region. The method also includes forming a capacitor over the contact.

公开(公告)号：US20230345703A1

公开(公告)日：2023-10-26

申请号：US17725481

申请日：2022-04-20

Applicant: Winbond Electronics Corp.

Inventor： Ying-Chu Yen

IPC: H01L27/108

CPC classification number: H01L27/10811 ,  H01L27/10891 ,  H01L27/10885

Abstract: A semiconductor memory structure includes an isolation structure surrounding an active region in a substrate. The structure also includes two word lines disposed in the active region. The structure also includes a bit line contact disposed between two word lines. The structure also includes a first bit line disposed over the bit line contact. The bit line contact includes polysilicon and has a concave top surface.

公开(公告)号：US20230076269A1

公开(公告)日：2023-03-09

申请号：US17881635

申请日：2022-08-05

Applicant: Winbond Electronics Corp.

Inventor： Ying-Chu Yen ,  Wei-Che Chang

IPC: H01L21/66 ,  H01L27/108 ,  H01L21/67

Abstract: A method and system for monitoring and controlling a semiconductor process are provided. The method includes: forming at least one active region on a substrate; forming a first patterned photoresist layer for defining at least two word lines on the active region after forming the active region; detecting and measuring positions and dimensions of the active region and the first patterned photoresist layer and calculating estimated areas of at least two estimated contact windows in the active region according to a predefined position of at least one bit line; adjusting the predefined position of the at least one bit line according to the estimated areas of the at least two estimated contact windows in the active region; and forming a second patterned photoresist layer on the substrate. The second patterned photoresist layer corresponds to the adjusted predefined position of the at least one bit line.

公开(公告)号：US11545493B2

公开(公告)日：2023-01-03

申请号：US17130883

申请日：2020-12-22

Applicant: Winbond Electronics Corp.

Inventor： Ying-Chu Yen ,  Wei-Che Chang

IPC: H01L27/108 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  H01L21/308 ,  H01L21/265 ,  H01L21/762 ,  H01L21/3105

Abstract: A method of fabricating a memory device includes forming an oxide layer on a semiconductor substrate, and forming an isolation structure in the semiconductor substrate and the oxide layer to define an active area. The method also includes forming a word line and a bit line in the semiconductor substrate, wherein the bit line is above the word line. The method further includes removing the oxide layer to form a recess between the isolation structure and the bit line, and forming a storage node contact in the recess. In addition, from a top view, the storage node contact of the memory device overlaps a corresponding portion of the active area.

公开(公告)号：US10910384B2

公开(公告)日：2021-02-02

申请号：US16411584

申请日：2019-05-14

Applicant: WINBOND ELECTRONICS CORP.

Inventor： Ying-Chu Yen ,  Wei-Che Chang

IPC: H01L27/10 ,  H01L27/108 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  H01L21/308 ,  H01L21/265 ,  H01L21/762 ,  H01L21/3105

Abstract: A method of fabricating a memory device includes firming an oxide layer on a semiconductor substrate, and forming an isolation structure in the semiconductor substrate and the oxide layer to define an active area. The method also includes forming a word line and a bit line in the semiconductor substrate, wherein the bit line is above the word line. The method further includes removing the oxide layer to form a recess between the isolation structure and the bit line, and forming a storage node contact in the recess. In addition, from a top view, the storage node contact of the memory device overlaps a corresponding portion of the active area.

公开(公告)号：US10424586B2

公开(公告)日：2019-09-24

申请号：US15867079

申请日：2018-01-10

Applicant: Winbond Electronics Corp.

Inventor： Ying-Chu Yen ,  Wei-Che Chang ,  Yoshinori Tanaka

IPC: H01L27/108 ,  H01L21/762 ,  H01L29/06

Abstract: A memory device includes a semiconductor substrate having at least one active area that is defined by a device isolation structure. The memory device further includes two neighboring buried word lines disposed in the semiconductor substrate of the active area. The memory device further includes a trench isolation structure disposed in the semiconductor substrate between the buried word lines.