APPARATUS FOR THE MEASUREMENT OF THE TOPOGRAPHY AND PHOTOELECTRIC PROPERTIES OF TRANSPARENT SURFACES
    1.
    发明申请
    APPARATUS FOR THE MEASUREMENT OF THE TOPOGRAPHY AND PHOTOELECTRIC PROPERTIES OF TRANSPARENT SURFACES 审中-公开
    用于测量透明表面的地形和光电性能的装置

    公开(公告)号:US20110193954A1

    公开(公告)日:2011-08-11

    申请号:US12701671

    申请日:2010-02-08

    CPC classification number: G01B11/24 G01B11/306

    Abstract: The apparatus for measurement of the topography of transparent surfaces is described. This is achieved by the observation and evaluation of patterns produced by optical beam emitted by projector, reflected from the measured surface, and projecting images on the screen. If the measured surface has photoelectric properties, then the same optical beam can be used to modulate the electrical currents and voltages measured in the measured material and produce spatially resolved data characterizing the photo-electric response of the sample.

    Abstract translation: 描述了用于测量透明表面的形状的装置。 这是通过观察和评估由投影仪发射的光束产生的图案,从测量的表面反射并在屏幕上投射图像来实现的。 如果测量的表面具有光电特性,则可以使用相同的光束来调制在测量的材料中测量的电流和电压,并产生表征样品的光电响应的空间分辨数据。

    Wafer thickness, topography, and layer thickness metrology system

    公开(公告)号:US20230160687A1

    公开(公告)日:2023-05-25

    申请号:US17532308

    申请日:2021-11-22

    CPC classification number: G01B11/06 G01J3/0218 G01J3/42

    Abstract: The invention describes a metrology system allowing for the reduction of the errors caused by vibration of the production floor and allowing for measurements of the thickness of wafers in motion. This is accomplished by performing simultaneous measurements of spectra containing interference signals containing distance information using a plurality of probes positioned on both sides of the measured wafer on the same detector at the same time or by means of plurality of synchronized detectors. System is also able to measure thickness of the individual optically accessible layers present in the sample.

    Wafer thickness, topography, and layer thickness metrology system

    公开(公告)号:US11885609B2

    公开(公告)日:2024-01-30

    申请号:US17532308

    申请日:2021-11-22

    CPC classification number: G01B11/06 G01J3/0218 G01J3/42

    Abstract: The invention describes a metrology system allowing for the reduction of the errors caused by vibration of the production floor and allowing for measurements of the thickness of wafers in motion. This is accomplished by performing simultaneous measurements of spectra containing interference signals containing distance information using a plurality of probes positioned on both sides of the measured wafer on the same detector at the same time or by means of plurality of synchronized detectors. System is also able to measure thickness of the individual optically accessible layers present in the sample.

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