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    Thin film transistor and method of fabricating same
    1.
    发明授权
    Thin film transistor and method of fabricating same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09257564B2

    公开(公告)日：2016-02-09

    申请号：US14307218

    申请日：2014-06-17

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： Chih-Lung Lee ,  Po-Li Shih

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/66969

    Abstract: A thin film transistor (TFT) includes a gate, a drain, a source, an insulating layer, a metal oxide layer, and an etch stopper layer. The metal oxide layer includes a source area, a drain area, and a channel area. The source is electrically coupled to the source area and the drain is electrically coupled to the drain area. Oxygen ions are implanted into the channel area via a surface treatment process to make an oxygen concentration of the channel area be greater than an oxygen concentration of each of the source area and the drain area.

    Abstract translation: 薄膜晶体管（TFT）包括栅极，漏极，源极，绝缘层，金属氧化物层和蚀刻阻挡层。 金属氧化物层包括源极区域，漏极区域和沟道区域。 源极电耦合到源极区域，漏极电耦合到漏极区域。 通过表面处理工艺将氧离子注入通道区域，以使通道面积的氧浓度大于源极区域和漏极区域中的每一个的氧浓度。

    Display panel and manufacturing method thereof
    2.
    发明授权
    Display panel and manufacturing method thereof 有权
    显示面板及其制造方法

    公开(公告)号：US09257565B2

    公开(公告)日：2016-02-09

    申请号：US14340573

    申请日：2014-07-25

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： Po-Li Shih

    IPC: H01L21/786 ,  H01L29/786 ,  H01L29/66 ,  H01L21/00

    CPC classification number: H01L29/7869 ,  H01L29/66969

    Abstract: A display panel manufacturing method includes forming a gate electrode on a substrate and a gate insulator, a semiconductor layer, and an etch stop layer covering the gate electrode. A photoresist layer covering on the etch stop layer is pattern from two opposite side of the substrate by two photolithography processes to form a photoresist pattern. The etch stop layer is dry etched to form an etch stop pattern via the photoresist pattern. The photoresist pattern is formed again by two photolithography processes. The semiconductor layer is wet etched to form a semiconductor pattern via the photoresist pattern. A source electrode and a drain electrode is formed corresponding to two opposite sides of the gate electrode to orderly cover the etch pattern, the semiconductor pattern, and the gate insulator.

    Abstract translation: 显示面板制造方法包括在基板上形成栅电极，以及栅极绝缘体，半导体层和覆盖栅电极的蚀刻停止层。 覆盖在蚀刻停止层上的光致抗蚀剂层通过两个光刻工艺从基板的两个相对侧图案化以形成光致抗蚀剂图案。 蚀刻停止层被干蚀刻以经由光致抗蚀剂图案形成蚀刻停止图案。 通过两个光刻工艺再次形成光致抗蚀剂图案。 湿式蚀刻半导体层以经由光致抗蚀剂图案形成半导体图案。 源电极和漏电极相应于栅电极的两个相对侧形成，以有序地覆盖蚀刻图案，半导体图案和栅极绝缘体。

    Display array substrate and manufacturing method thereof
    5.
    发明授权
    Display array substrate and manufacturing method thereof 有权
    显示阵列基板及其制造方法

    公开(公告)号：US09425294B2

    公开(公告)日：2016-08-23

    申请号：US14556731

    申请日：2014-12-01

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： Po-Li Shih ,  Yi-Chun Kao

    IPC: H01L29/66 ,  H01L29/786 ,  H01L29/12

    CPC classification number: H01L27/1214 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A manufacturing method of display array substrate is provided. The method includes depositing a first metal layer on a substrate and defining a peripheral area and a display area, coating a photo-resist layer on the first metal layer located in the peripheral area, anodizing the first metal layer to a first metal oxide layer with the photo-resist layer as a mask, patterning the first metal oxide layer located in the display area to a gate insulator, removing the photo-resist layer to expose the first metal layer in the peripheral area, forming a channel layer on the gate insulator, and depositing a second metal layer and patterning the second metal layer located in the display area to form a source electrode and a drain electrode.

    Abstract translation: 提供了一种显示阵列基板的制造方法。 该方法包括在衬底上沉积第一金属层并限定外围区域和显示区域，在位于周边区域的第一金属层上涂覆光致抗蚀剂层，将第一金属层阳极氧化为第一金属氧化物层， 作为掩模的光致抗蚀剂层，将位于显示区域中的第一金属氧化物层图案化成栅极绝缘体，去除光致抗蚀剂层以露出周边区域中的第一金属层，在栅极绝缘体上形成沟道层 并且沉积第二金属层并且图案化位于显示区域中的第二金属层以形成源电极和漏电极。

    Self-aligned metal oxide thin film transistor and method of making same
    6.
    发明授权
    Self-aligned metal oxide thin film transistor and method of making same 有权
    自对准金属氧化物薄膜晶体管及其制造方法

    公开(公告)号：US09379251B1

    公开(公告)日：2016-06-28

    申请号：US14591189

    申请日：2015-01-07

    Applicant: Ye Xin Technology Consulting Co., Ltd.

    Inventor： Kuo-Lung Fang ,  Yi-Chun Kao ,  Po-Li Shih ,  Chih-Lung Lee ,  Hsin-Hua Lin

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78696 ,  H01L21/425 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover the gate electrode, a channel layer on the electrically insulating layer, a first photoresist pattern on the channel layer, a metal layer on the electrically insulating layer, the channel layer and the first photoresist layer, and a second photoresist pattern on the metal layer. A middle portion of the metal layer is then removed to form a source electrode and a drain electrode and to expose the first photoresist pattern and a portion of the channel layer between the first and second photoresist patterns. The exposed portion of the channel layer is then processed to have its electrical conductivity be lowered to thereby reduce a hot-carrier effect of the channel layer.

    Abstract translation: 一种用于形成TFT的方法，包括：在基板上设置基板，栅电极，在基板上形成电绝缘层，以完全覆盖栅电极，电绝缘层上的沟道层，沟道层上的第一光刻胶图案， 电绝缘层上的金属层，沟道层和第一光致抗蚀剂层，以及金属层上的第二光致抗蚀剂图案。 然后去除金属层的中间部分以形成源电极和漏电极，并且在第一和第二光致抗蚀剂图案之间露出第一光致抗蚀剂图案和沟道层的一部分。 然后处理通道层的暴露部分以使其导电性降低，从而降低沟道层的热载流子效应。

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