公开(公告)号：US12283465B2

公开(公告)日：2025-04-22

申请号：US18008008

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki Kamata ,  Taro Ikeda ,  Satoru Kawakami ,  Takumi Kabe

IPC: H01J37/00 ,  H01J37/32 ,  H01L21/304

Abstract: This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

公开(公告)号：US12233501B2

公开(公告)日：2025-02-25

申请号：US18111228

申请日：2023-02-17

Applicant: TES Co., Ltd

Inventor： Sang-Jean Jeon ,  Hyun-Sang Hwang

IPC: H01J37/00 ,  B23Q3/154 ,  H01J37/32

Abstract: There is provided a substrate support device. The substrate support device includes a substrate support part on which a wafer is deposited, the substrate support part including a first mesh electrode and a second mesh electrode disposed under the first mesh electrode; a chucking circuit configured to apply a DC voltage to the first mesh electrode; and an edge control circuit configured to control timings of operations related to the first mesh electrode and the second mesh electrode and control RF (Radio Frequency). The second mesh electrode is divided into a plurality of second sub-mesh electrode to remove an induced electromotive force generated due to a closed loop.

公开(公告)号：US12224154B2

公开(公告)日：2025-02-11

申请号：US16961328

申请日：2019-01-10

Applicant: UNIVERSITY OF KANSAS

Inventor： Eduardo Rosa-Molinar

IPC: H01J37/00 ,  C08L101/12 ,  G01N1/30 ,  G01N1/42 ,  G01Q30/02 ,  H01J37/26

Abstract: Disclosed are compositions and methods for the conductive fixation of organic material, including biological samples. The compositions and methods described herein can address the problems of charging and sample damage caused by electron beam-sample interactions within an electron microscope.

公开(公告)号：US12191114B2

公开(公告)日：2025-01-07

申请号：US17924342

申请日：2021-05-07

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Xingfei Mao ,  Masaya Odagiri ,  Gang Wei ,  Guodong Chen

IPC: H01J37/00 ,  H01J37/32 ,  H01L21/67

Abstract: The present disclosure provides a semiconductor reaction chamber and an atomic layer plasma etching apparatus. The semiconductor reaction chamber includes a dielectric window and a reaction chamber body. The spray head is arranged between the dielectric window and the top wall of the reaction chamber body, and divides the plasma generation area into an upper strong plasma area and a lower weak plasma area. Moreover, a plurality of through-holes are distributed in the central area of the spray head and configured to allow the plasma in the strong plasma area to pass through. A first gas channel is arranged in an edge area of the spray head. The process reaction gas inlet member is located on a side where the gas inlet end of the first gas channel of the spray head is located. A second gas channel is arranged in the process reaction gas inlet member.

公开(公告)号：US11984298B2

公开(公告)日：2024-05-14

申请号：US17756058

申请日：2020-12-02

Applicant: Lam Research Corporation

Inventor： Eller Y. Juco ,  Thomas Lee Frederick ,  Karl Frederick Leeser ,  Paul Konkola

IPC: H01J37/00 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H01J37/32082 ,  H03H7/40

Abstract: An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.

公开(公告)号：US11948776B2

公开(公告)日：2024-04-02

申请号：US17641503

申请日：2021-01-21

Applicant: Hitachi High-Tech Corporation

Inventor： Chen Pin Hsu ,  Hitoshi Tamura

IPC: H01J37/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32229 ,  H01J37/32266 ,  H01J37/32495 ,  H05H1/46 ,  H01J37/32311 ,  H01J2237/334

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

公开(公告)号：US20240063288A1

公开(公告)日：2024-02-22

申请号：US18501554

申请日：2023-11-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen LO ,  Jung-Hao CHANG ,  Li-Te LIN ,  Pinyen LIN

IPC: H01L29/51 ,  H01J37/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01J37/00 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28088 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6681 ,  H01L29/785 ,  H01L29/4966

Abstract: A semiconductor device includes first and second gate structures over a substrate, the first gate structure has a first width that is smaller than a second width of the second gate structure, in which a lower portion of the first gate structure having a first work-function material (WFM) layer, the first WFM layer having a top surface, a lower portion of the second gate structure having a second WFM layer, the second WFM layer having a top surface. A first gate electrode is disposed over the first WFM layer and a second gate electrode has a lower portion disposed in the second WFM layer, in which the first gate electrode has a first width that is smaller than a second width of the second gate electrode, and wherein the top surface of the second WFM layer is at a level below a top surface of the second gate electrode.

公开(公告)号：USRE49483E1

公开(公告)日：2023-04-04

申请号：US16414386

申请日：2019-05-16

Applicant: ASML Netherlands B.V.

Inventor： Paul IJmert Scheffers

IPC: H01J37/00 ,  H01J37/304 ,  B82Y10/00 ,  H01J37/317 ,  B82Y40/00 ,  G01B11/14

Abstract: The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion clement for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

公开(公告)号：US11600464B2

公开(公告)日：2023-03-07

申请号：US17061972

申请日：2020-10-02

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Shao-Yu Hu

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/32 ,  H01J37/24

Abstract: The invention provides a bias voltage to the component (such as the Faraday cup) for reducing the generation of particles, such as the implanted ions and/or the combination of the implanted ions and the material of the component, and preventing particles peeling away the component. The strength of the biased voltage should not significantly affect the implantation of ions into the wafer and should significantly prevent the emission of radiation and/or electrons away the biased component. How to provide and adjust the biased voltage is not limited, both the extra voltage source and the amended Pre-Amplifier are acceptable. Moreover, due to the electric field generated by the Faraday cup is modified by the biased voltage, the ion beam divergence close to the Faraday cup may be reduced such that the potential difference between the ion beam measured by the profiler and received by the Faraday cup may be minimized.

公开(公告)号：US11522065B2

公开(公告)日：2022-12-06

申请号：US17207425

申请日：2021-03-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen Lo ,  Jung-Hao Chang ,  Li-Te Lin ,  Pinyen Lin

IPC: H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/165 ,  H01L27/12 ,  H01L27/088 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/28 ,  H01L21/67 ,  H01J37/00 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/84

Abstract: A method includes following steps. First and second gate electrodes are formed over a substrate, with an ILD layer between the first and second gate electrodes. A first etch operation is performed to etch the first and second gate electrodes. A sacrificial layer is formed across the etched first and second gate electrodes and the ILD layer. A second etch operation is performed to etch the sacrificial layer and the etched the first and second gate electrodes.