公开(公告)号：US20250166957A1

公开(公告)日：2025-05-22

申请号：US18924832

申请日：2024-10-23

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/08 ,  G01N27/06 ,  H01J37/32

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship dV 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, dV0/dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

公开(公告)号：US20250149287A1

公开(公告)日：2025-05-08

申请号：US18838013

申请日：2022-03-10

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO

IPC: H01J37/08 ,  H01J37/20 ,  H01J37/304

Abstract: A change amount of a frequency of a crystal resonator 40 per unit time is increased. An ion milling device 100 includes an ion source 20 configured to emit an ion beam, a sample stage 30 configured to allow a sample to be placed thereon, a first inclining mechanism 31 connected to the sample stage 30 and configured to adjust an inclined angle of the sample stage 30, the crystal resonator 40, an oscillation circuit 8 electrically connected to the crystal resonator 40 and configured to vibrate the crystal resonator 40 and receive a frequency output from the crystal resonator 40, a second inclining mechanism 41 connected to the crystal resonator 40 and configured to adjust an inclined angle of the crystal resonator 40, and a control unit 2. The control unit 2 is electrically connected to the ion source 20, the first inclining mechanism 31, the oscillation circuit 8, and the second inclining mechanism 41, and is configured to control operations of the ion source 20, the first inclining mechanism 31, the oscillation circuit 8, and the second inclining mechanism 41.

公开(公告)号：US20250118524A1

公开(公告)日：2025-04-10

申请号：US18905177

申请日：2024-10-03

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil J. Bassom ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

公开(公告)号：US20250095949A1

公开(公告)日：2025-03-20

申请号：US18370158

申请日：2023-09-19

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

Abstract: A plasma source having an adjustable exit aperture is disclosed. The plasma source has a cylindrical body and two ends, wherein a housing aperture is formed along the cylindrical body. An adjustable output plate is disposed on the cylindrical body and covers the housing aperture. The adjustable output plate has an exit aperture, smaller than the housing aperture. The adjustable output plate is capable of rotation in the circumferential direction, thus moving the position of the exit aperture relative to a workpiece holder. The plasma source is configured such that changes to the exit angle may be performed without breaking vacuum. In some embodiments, a defining aperture is located outside the exit aperture to define the path of radicals and neutrals. In other embodiments, biased electrodes may be disposed outside the exit aperture.

公开(公告)号：US20250087441A1

公开(公告)日：2025-03-13

申请号：US18367839

申请日：2023-09-13

Applicant: INTEVAC, INC.

Inventor： Thomas P. Nolan

IPC: H01J37/08 ,  C23C16/48 ,  C23C16/52 ,  H01J37/317

Abstract: A chemical vapor deposition chamber including a vacuum chamber; a power source; a gas conduit coupling the vacuum chamber to a precursor gas source; a filament arrangement energized by the power source to thereby impart thermal energy to molecules of precursor gas flowing from the precursor gas source; a coupling mechanism; wherein the filament arrangement comprises a plurality of filaments and the coupling mechanism electrically coupling the power source only to a subset of the plurality of filaments at any given time, while remaining filaments are not energized.

公开(公告)号：US12243707B2

公开(公告)日：2025-03-04

申请号：US18448026

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US12230471B2

公开(公告)日：2025-02-18

申请号：US17788556

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Aida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Hitoshi Kamoshida

IPC: H01J37/24 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30 ,  H01J37/305

Abstract: There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.
The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

公开(公告)号：US20250054722A1

公开(公告)日：2025-02-13

申请号：US18232169

申请日：2023-08-09

Applicant: Applied Materials, Inc.

Inventor： Ori Noked

IPC: H01J37/08 ,  H01J37/244 ,  H01J37/317

Abstract: An ion source with a target holder for holding a solid dopant material is disclosed. The target holder is mounted to a shaft, which may be in communication with an actuator, which allows the solid dopant material to be inserted and retracted from the arc chamber. The shaft and/or the target holder is actively cooled such that the solid dopant material remains below its melting point. In this way, the solid dopant material may be inserted into the arc chamber without any melting. The cooling mechanisms used may include gas cooling, liquid cooling, thermoelectric cooling or other cooling techniques.

公开(公告)号：US12154754B2

公开(公告)日：2024-11-26

申请号：US17835107

申请日：2022-06-08

Applicant: Applied Materials, Inc.

Inventor： Craig R. Chaney ,  Graham Wright

IPC: H01J37/08 ,  H01J27/08 ,  H01J37/34

Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible contains a solid dopant material, such as a metal. A porous wicking tip is disposed in the crucible in contact with the solid dopant material. The porous wicking tip may be a tube with one or more interior conduits. Alternatively, the porous tip may be two concentric cylinders with a plurality of rods disposed in the annular ring between the two cylinders. Alternatively, the porous tip may be one or more foil layers wound together. In each of these embodiments, the wicking tip can be used to control the flow rate of molten dopant material to the arc chamber.

公开(公告)号：US20240387139A1

公开(公告)日：2024-11-21

申请号：US18784132

申请日：2024-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chansyun David YANG ,  Keh-Jeng CHANG ,  Chan-Lity YANG ,  Perng-Fei YUH

IPC: H01J37/08 ,  H01J37/32 ,  H01L21/311

Abstract: The present disclosure relates to an ion beam etching (IBE) system including a process chamber. The process chamber includes a plasma chamber configured to provide plasma. In addition, the process chamber includes an accelerator grid having multiple accelerator grid elements including a first accelerator grid element and a second accelerator grid element. A first wire is coupled to the first accelerator grid element and configured to supply a first voltage to the first accelerator grid element. A second wire is coupled to the second accelerator grid element and configured to supply a second voltage to the second accelerator grid element, where the second voltage is different from the first voltage. A first ion beam through a first hole is controlled by the first accelerator grid element, and a second ion beam through a second hole is controlled by the second accelerator grid element.