公开(公告)号：US20250166959A1

公开(公告)日：2025-05-22

申请号：US18934357

申请日：2024-11-01

Applicant: Axcelis Technologies, Inc.

Inventor： Andy Ray

IPC: H01J37/147 ,  H01J37/317

Abstract: An ion implantation system includes an ion source that generates ions and produces an ion beam along a beamline, a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio. A beamline formed by ion beam is directed to a workpiece target. A gating apparatus includes one or more of: a mechanical gating device configured to block or deflect the ion beam from contacting a workpiece target; or a power control gating device configured to cut off power to the ion source. The beam-to-workpiece target translation mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. Methods for implanting ions in predetermined profiles on a workpiece are disclosed with multiple scans. These systems and methods allow for implantation profiles with smooth curvature and/or sharp differences in dosage characteristics at adjacent positions.

公开(公告)号：US20250157784A1

公开(公告)日：2025-05-15

申请号：US18388490

申请日：2023-11-09

Applicant: Applied Materials, Inc.

Inventor： Chuang-Chia Lin

IPC: H01J37/147

Abstract: Embodiments disclosed herein include an apparatus for measuring ion angles. In an embodiment, the apparatus comprises a first plate with an array of first openings, where the first plate is electrically conductive, and a second plate with an array of second openings below the first plate, where the second plate is electrically conductive. In an embodiment, an actuator is coupled to the first plate or the second plate, where the actuator is configured to displace one of the first plate or the second plate. In an embodiment, a third plate is below the second plate, where the third plate is electrically conductive.

公开(公告)号：US20250157783A1

公开(公告)日：2025-05-15

申请号：US19025881

申请日：2025-01-16

Applicant: ASML Netherlands B.V.

Inventor： Xuerang HU ,  Weiming REN ,  Xuedong LIU ,  Zhong-wei CHEN

IPC: H01J37/147 ,  H01J37/12 ,  H01J37/26

Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

公开(公告)号：US20250157779A1

公开(公告)日：2025-05-15

申请号：US18506957

申请日：2023-11-10

Applicant: FEI Company

Inventor： Radovan Vašina ,  Bohuslav Sed'a ,  Mostafa Maazouz ,  Lukáš Král

IPC: H01J37/05 ,  H01J37/04 ,  H01J37/10 ,  H01J37/147

Abstract: Charged-particle beam (CPB) optical systems can include a beam acceptance aperture plate defining a first acceptance aperture and at least one second acceptance aperture, situated with respect to a CPB source so that a first CPB is transmitted by the first acceptance aperture and a second CPB is transmitted by a second acceptance aperture. A CPB lens is situated to receive the first and second CPBs from the beam acceptance aperture plate and direct the first and second CPBs towards a filter aperture plate to transmit selected spectral portion of the second CPB. The selected spectral component of the first CPB can be selectively directed to a workpiece by a beam steering deflector along the same axis. In some examples, the first and second CPBs have different beam currents and only one is directed to a workpiece.

公开(公告)号：US12293895B2

公开(公告)日：2025-05-06

申请号：US18379400

申请日：2023-10-12

Applicant: Carl Zeiss SMT GmbH

Inventor： Eugen Foca ,  Amir Avishai ,  Thomas Korb ,  Daniel Fischer

IPC: H01J37/147 ,  H01J37/10 ,  H01J37/26 ,  H01J37/28

Abstract: The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.

公开(公告)号：US20250140569A1

公开(公告)日：2025-05-01

申请号：US19007772

申请日：2025-01-02

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  Pradeep Subrahmanyan ,  Dennis Rodier ,  Kyuha Shim

IPC: H01L21/3115 ,  H01J37/147 ,  H01J37/304 ,  H01J37/317 ,  H01L21/66

Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

公开(公告)号：US12288666B2

公开(公告)日：2025-04-29

申请号：US17655661

申请日：2022-03-21

Applicant: NuFlare Technology, Inc.

Inventor： Koichi Ishii ,  Chosaku Noda

IPC: H01J37/20 ,  H01J37/147 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26

Abstract: A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detection element.

公开(公告)号：US12288664B2

公开(公告)日：2025-04-29

申请号：US17695879

申请日：2022-03-16

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Dirk Preikszas ,  Michael W. Phaneuf

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/09 ,  H01J37/10 ,  H01J37/244

Abstract: The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.

公开(公告)号：US20250132119A1

公开(公告)日：2025-04-24

申请号：US19009902

申请日：2025-01-03

Applicant: NuFlare Technology, Inc.

Inventor： Kazuhiko INOUE ,  Munehiro OGASAWARA ,  Masataka SHIRATSUCHI

IPC: H01J37/147 ,  H01J37/05 ,  H01J37/153

Abstract: According to one aspect of the present invention, a multi-electron beam image acquisition apparatus, includes: a plurality of first electrostatic deflectors in two stages, each of the first electrostatic deflectors having a plurality of electrodes of quadrupoles or more, configured to deflect multiple primary electron beams collectively to scan a substrate with the multiple primary electron beams; a potential application circuit configured to apply a retarding potential to the substrate; a first determination circuit configured to determine a first phase difference of deflection directions for the plurality of first electrostatic deflectors so as to reduce aberration caused by deflection of the multiple primary electron beams according to a magnitude of the retarding potential; and a deflection control circuit configured to apply an individual potential according to the first phase difference of the deflection directions to each electrode of the plurality of first electrostatic deflectors.

公开(公告)号：US12278081B2

公开(公告)日：2025-04-15

申请号：US17598841

申请日：2020-03-06

Applicant: ASML Netherlands B.V.

Inventor： Qingpo Xi ,  Xuerang Hu ,  Xuedong Liu ,  Weiming Ren ,  Zhong-Wei Chen

IPC: H01J37/05 ,  H01J37/147

Abstract: A multi-beam inspection apparatus including an adjustable beam separator is disclosed. The adjustable beam separator is configured to change a path of a secondary particle beam. The adjustable beam separator comprises a first Wien filter and a second Wien filter. Both Wien filters are aligned with a primary optical axis. The first Wien filter and the second Wien filter are independently controllable via a first excitation input and a second excitation input, respectively. The adjustable beam separator is configured move the effective bending point of the adjustable beam separator along the primary optical axis based on the first excitation input and the second excitation input.