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    MICROSCOPY IMAGING METHOD AND SYSTEM
    1.
    发明申请
    MICROSCOPY IMAGING METHOD AND SYSTEM 有权

    公开(公告)号：US20250166961A1

    公开(公告)日：2025-05-22

    申请号：US19029225

    申请日：2025-01-17

    Applicant: FIBICS INCORPORATED

    Inventor： Michael William PHANEUF ,  Ken Guillaume LAGAREC

    IPC: H01J37/26 ,  H01J37/22 ,  H01J37/28 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305

    Abstract: A method to compensate for drift while controlling a charged particle beam (CPB) system having at least one charged particle beam controllable in position. Sources of drift include mechanical variations in the stage supporting the sample, beam deflection shifts, and environmental impacts, such as temperature. The method includes positioning a sample supported by a stage in the CPB system, monitoring a reference fiducial on a surface of the sample from a start time to an end time, determining a drift compensation to compensate for a drift that causes an unintended change in the position of a first charged particle beam relative to the sample by a known amount over a period of time based on a change in the position of the reference fiducial between the start time and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the CPB system.

    Particle beam device, method for operating the particle beam device and computer program product
    3.
    发明授权
    Particle beam device, method for operating the particle beam device and computer program product 有权

    公开(公告)号：US12300461B2

    公开(公告)日：2025-05-13

    申请号：US17822530

    申请日：2022-08-26

    Applicant: Carl Zeiss Microscopy GmbH

    Inventor： Björn Gamm ,  Erik Essers

    IPC: H01J37/28 ,  H01J37/10 ,  H01J37/244

    Abstract: A particle beam device has a particle source, an extraction stop, an anode stop and a beam tube. A driver system of the particle beam device is configured to apply an electrical excitation stop potential to the extraction stop, to apply an electrical anode stop potential, able to be set in a variable manner, to the anode stop and to apply an electrical beam tube potential to the beam tube. A controller of the particle beam device is configured to control the driver system such that a voltage between the extraction stop and the anode stop is able to be set in a variable manner, as a result of which a current strength of the particle beam passing through the aperture of the anode stop is able to be set in a variable manner.

    3D metrology from 3D datacube created from stack of registered images obtained during delayering of the sample
    5.
    发明授权
    3D metrology from 3D datacube created from stack of registered images obtained during delayering of the sample 有权

    公开(公告)号：US12272518B2

    公开(公告)日：2025-04-08

    申请号：US18213220

    申请日：2023-06-22

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Ilya Blayvas

    IPC: H01J37/28 ,  H01J37/22 ,  H01J37/26 ,  H01J37/305

    Abstract: A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

    APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS
    6.
    发明申请
    APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS 有权

    公开(公告)号：US20250112023A1

    公开(公告)日：2025-04-03

    申请号：US18829217

    申请日：2024-09-09

    Applicant: ASML Netherlands B.V.

    Inventor： Weiming REN ,  Shuai LI ,  Xuedong LIU ,  Zhongwei CHEN

    IPC: H01J37/28 ,  H01J37/12 ,  H01J37/147

    Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

    MULTIPOLE ELEMENTS AND CHARGED PARTICLE MICROSCOPE SYSTEMS INCLUDING THE SAME
    7.
    发明申请
    MULTIPOLE ELEMENTS AND CHARGED PARTICLE MICROSCOPE SYSTEMS INCLUDING THE SAME 有权

    公开(公告)号：US20250112019A1

    公开(公告)日：2025-04-03

    申请号：US18478972

    申请日：2023-09-29

    Applicant: FEI Company

    Inventor： Alexander Henstra ,  Galen Gledhill ,  Ali Gheidari

    IPC: H01J37/153 ,  H01J37/28

    Abstract: Multipole elements and charged particle microscope systems including the same. In an example, an apparatus can include plurality of electrodes including a first shape subset and a second shape subset. Each electrode of the first shape subset includes an electrode active surface with a shape that is different than that of each electrode of the second shape subset. In another example, an apparatus can include a plurality of electrodes including a first side subset and a second side subset. Each electrode includes an electrode extension extending along a first lateral direction or a second lateral direction. In another example, an apparatus can include an optical column with a plurality of multipole elements that are fully contained within a first angular envelope that subtends a first angle that is at most 50 degrees while the working distance is at most 10 mm.

    Scanning electron microscope and objective lens
    8.
    发明授权
    Scanning electron microscope and objective lens 有权

    公开(公告)号：US12261014B2

    公开(公告)日：2025-03-25

    申请号：US17859399

    申请日：2022-07-07

    Applicant: JEOL Ltd.

    Inventor： Motohiro Nakamura ,  Takeyuki Kobayashi

    IPC: H01J37/14 ,  H01J37/28

    Abstract: There is provided a scanning electron microscope which has a sample chamber capable of being evacuated to a low vacuum. The scanning electron microscope includes an electron gun for emitting an electron beam, an objective lens for focusing the emitted beam onto a sample, and a sample chamber in which the sample is housed. The objective lens includes an inner polepiece, an outer polepiece disposed outside the inner polepiece and facing the sample chamber, at least one through-hole extending through the inner and outer polepieces, and at least one cover member that closes off the through-hole. An opening is formed between the inner polepiece and the outer polepiece. The objective lens causes leakage of magnetic field from the opening toward the sample. The sample chamber has a degree of vacuum lower than that in an inner space that forms an electron beam path inside the inner polepiece.

    METHOD AND SYSTEM FOR CALIBRATION OF DIFFRACTION ANGLES
    9.
    发明申请
    METHOD AND SYSTEM FOR CALIBRATION OF DIFFRACTION ANGLES 有权

    公开(公告)号：US20250095955A1

    公开(公告)日：2025-03-20

    申请号：US18370303

    申请日：2023-09-19

    Applicant: Applied Materials Israel Ltd.

    Inventor： Konstantin Chirko ,  Itamar Shani ,  Lior Yaron ,  Guy Eytan

    IPC: H01J37/26 ,  G01N23/203 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: Disclosed are method and system for calibrating a tilt angle of an electron beam of a backscattered scanning electron microscope including scanning a bare wafer at a plurality of electron beam tilt and azimuth angles, thereby obtaining a calibration map representing a crystal orientation of the bare wafer, selecting a tilt angle and defining an expected diffraction pattern associated with the tilt angle, based on the calibration map; scanning a patterned wafer at the selected tilt angle, comparing the diffraction pattern of the image obtained from the scanning of the patterned wafer at the selected tilt angle with the expected diffraction pattern; correcting the tilt angle of the electron beam of the BSEM tool, such that the diffraction pattern of the image obtained during scanning of the patterned wafer will align with the expected diffraction pattern.

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