公开(公告)号：US12249483B2

公开(公告)日：2025-03-11

申请号：US17929145

申请日：2022-09-01

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/304

Abstract: In one embodiment, a charged particle beam writing method includes transferring a substrate to a writing chamber of a charged particle beam writing apparatus by use of a transfer mechanism while maintaining each of the writing chamber and the transfer mechanism at a predetermined temperature, calculating correction amounts for charged particle beams based on correction data for charged particle beam irradiation positions each associated with a previously obtained elapsed time from a predetermined starting point in time of transfer of the substrate and the elapsed time at a point in time of irradiation with each of the charged particle beams, and applying the charged particle beams to positions corrected based on the calculated correction amounts for the charged particle beams to write a pattern on the substrate.

公开(公告)号：US12183538B2

公开(公告)日：2024-12-31

申请号：US17653562

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Takayuki Ito

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/265 ,  H01L29/78

Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a stage on which a wafer can be placed. A separator separates a beam of impurities to be introduced into the wafer into an ion component and a neutral component. A controller switches the semiconductor manufacturing apparatus between a first mode and a second mode, where in the first mode, the ion component is introduced into the wafer and in the second mode, the neutral component is introduced into the wafer.

公开(公告)号：US20240347316A1

公开(公告)日：2024-10-17

申请号：US18753972

申请日：2024-06-25

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Hans Fritz ,  Ingo Mueller

IPC: H01J37/317 ,  H01J37/10 ,  H01J37/145 ,  H01J37/147 ,  H01J37/26 ,  H01J37/302

CPC classification number: H01J37/3177 ,  H01J37/10 ,  H01J37/145 ,  H01J37/147 ,  H01J37/263 ,  H01J37/3023 ,  H01J2237/0453 ,  H01J2237/04926

Abstract: A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

公开(公告)号：US20240304413A1

公开(公告)日：2024-09-12

申请号：US18597676

申请日：2024-03-06

Applicant: IMS Nanofabrication GmbH

Inventor： Christoph Spengler ,  Michael Haberler

IPC: H01J37/304 ,  H01J37/04 ,  H01J37/153 ,  H01J37/22 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/045 ,  H01J37/153 ,  H01J37/222 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31777

Abstract: The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.

公开(公告)号：US20240274397A1

公开(公告)日：2024-08-15

申请号：US18509372

申请日：2023-11-15

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Sebastian Schaedler

IPC: H01J37/147 ,  H01J37/302 ,  H01J37/305

CPC classification number: H01J37/1474 ,  H01J37/3023 ,  H01J37/3053

Abstract: Operating a particle beam apparatus includes processing, imaging, and/or analyzing an object. When guiding the particle beam along first dwell regions of a first scan line, the particle beam remains at each of the first dwell regions for a first dwell time. When guiding the particle beam along second dwell regions of a second scan line, the particle beam remains at each of the second dwell regions for a second dwell time. The first dwell time is shorter than the second dwell time. Alternatively, a first region of the first dwell regions has a first spacing with respect to a closest arranged adjacent second region of the first dwell regions. A first region of the second dwell regions has a second spacing with respect to a closest arranged adjacent second region of the second dwell regions. The second spacing is smaller than the first spacing.

公开(公告)号：US11837436B2

公开(公告)日：2023-12-05

申请号：US17646067

申请日：2021-12-27

Applicant: NuFlare Technology, Inc.

Inventor： Michihiko Ikeda ,  Akinori Mine ,  Kuniaki Kawahara

IPC: H01J37/302 ,  H03M1/06 ,  H01J37/147

CPC classification number: H01J37/302 ,  H01J37/147 ,  H03M1/0604

Abstract: In one embodiment, a waveform generating device includes a first DA converter converting input data, a controller outputting a first signal having a command value based on the input data, and a second signal having a command value differing by a constant value from the first signal, a second DA converter converting the first signal, a third DA converter converting the second signal, and a combiner combining the output of the first DA converter, the output of the second DA converter, and the output of the third DA converter. When a value of a predetermined first high-order bit of the input data is inverted, the controller changes the command value of the first signal such that a value of the first high-order bit or a second high-order bit different from the first high-order bit is inverted.

公开(公告)号：US11756765B2

公开(公告)日：2023-09-12

申请号：US17304307

申请日：2021-06-17

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Harold Robert Zable ,  Nagesh Shirali ,  Abhishek Shendre ,  William E. Guthrie ,  Ryan Pearman

IPC: H01J37/302 ,  H01J37/317 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20

CPC classification number: H01J37/3026 ,  G03F1/36 ,  G03F1/70 ,  G03F7/2061 ,  H01J37/3177 ,  H01J2237/31761 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.

公开(公告)号：US11664194B2

公开(公告)日：2023-05-30

申请号：US17183090

申请日：2021-02-23

Applicant: Magic Leap, Inc.

Inventor： Victor Kai Liu ,  Mauro Melli

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3174 ,  H01J37/3026

Abstract: A Procedural EBL system implements a user-provided oracle function (e.g., associated with a specific pattern) to generate control instructions for electron beam drive electronics in an on-demand basis. A control system may invoke the oracle function to query the pattern at individual point locations (e.g., individual x,y locations), and/or it may query the pattern over an area corresponding to a current field being addressed by the beam and stage positioner, for example. This Procedural EBL configuration manages control and pattern generation so that the low-level drive electronics and beam column may remain unchanged, allowing it to leverage existing EBL technologies.

公开(公告)号：US20230057148A1

公开(公告)日：2023-02-23

申请号：US17408876

申请日：2021-08-23

Applicant: Applied Materials Israel Ltd.

Inventor： Ilya Blayvas ,  Yehuda Zur

IPC: H01J37/302 ,  H01L21/66 ,  H01J37/28 ,  H01J37/305

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

公开(公告)号：US20230056463A1

公开(公告)日：2023-02-23

申请号：US18048414

申请日：2022-10-20

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi MATSUMOTO

IPC: H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/141 ,  H01J37/24 ,  G03F7/20

Abstract: A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.