Abstract:
An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.
Abstract:
Provided is a light-emitting device and a method for manufacturing the same which avoid a distinct color unevenness during the light emission even if variations are present among the light-emitting elements in the concentration of the phosphor that precipitates in the resin for sealing the light-emitting elements. The light-emitting device includes a substrate, a plurality of light-emitting elements that are mounted on the substrate, a first resin layer that integrally seals the light-emitting elements and includes a first phosphor that is excited by light from the light-emitting elements at a concentration that is high as it goes to a lower end near the substrate from an upper end distant from the substrate, and a second resin layer that is provided at an upper side of the first resin layer and includes a second phosphor that is excited by light from the light-emitting elements at a uniform concentration.
Abstract:
The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO3:Pr3+, Lu2Si2O2:Pr3+, LaPO4:Pr3+, YBO3:Pr3+ and YPO4:Bi3+.
Abstract:
Provided is a light-emitting device and a method for manufacturing the same which avoid a distinct color unevenness during the light emission even if variations are present among the light-emitting elements in the concentration of the phosphor that precipitates in the resin for sealing the light-emitting elements. The light-emitting device includes a substrate, a plurality of light-emitting elements that are mounted on the substrate, a first resin layer that integrally seals the light-emitting elements and includes a first phosphor that is excited by light from the light-emitting elements at a concentration that is high as it goes to a lower end near the substrate from an upper end distant from the substrate, and a second resin layer that is provided at an upper side of the first resin layer and includes a second phosphor that is excited by light from the light-emitting elements at a uniform concentration.
Abstract:
The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e., a similar approach as used by integrated circuits (IC) and microelectromechanical systems (MEMS). The invention also relates to a lighting arrangement comprising at least one field emission light source.
Abstract:
An electroluminescence device and a display device including an electroluminescence device are provided. The electroluminescence device includes an anode including silver, wherein at least a portion of the anode substantially extends in a horizontal direction; a first layer provided over the anode; an organic layer including a luminescent layer; a cathode provided over the organic layer; and an insulating layer provided over an end portion of the anode and an end portion of the first layer, wherein at least a portion of the cathode substantially extends in the horizontal direction in a light emission region, wherein a surface of the insulating layer has a curved portion, and wherein at least a portion of the cathode within a region of the insulating layer above the curved portion extends along a first angled upward direction between the horizontal direction and the thickness direction of the anode.
Abstract:
An electro-optic device includes: a first substrate that includes a first surface; an optical element that is disposed in a first region on the first surface; a casing that is disposed to overlap with a part of the optical element along an outer periphery of the first region on the first surface and includes first and second end portions; a first resin layer that is disposed on an inside of the second end portion of the casing on the first surface and is installed to overlap with at least a part of the optical element; a second resin layer that is disposed on the first resin layer; and a second substrate that faces the first surface and is disposed on the second resin layer.
Abstract:
Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a β-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005≦a≦0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a β-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.
Abstract:
Disclosed are a red light-emitting nitride material, a light-emitting part and a light-emitting device comprising the same. The General Formula of the light-emitting material is: Ma(Al,B)bSicNdOe:Eum, Rn, wherein M is at least one of the alkaline earth metal elements Mg, Ca, Sr, Ba and Zn; R is at least one of the rare earth elements Y, La, Ce, Gd and Lu; and 0.9≦a
Abstract:
A light-emitting diode module includes: at least one first light-emitting diode chip which is based on the material system AlInGaN and which emits a first radiation in the blue spectral range, at least one second light-emitting diode chip which is based on the material system InGaAlP and which emits a second radiation in the red spectral range, and a conversion element, which is disposed downstream of at least the first light-emitting diode chip and is designed for converting part of the first radiation into a third radiation in the green to green-yellow spectral range, wherein the conversion element comprises a first phosphor and a second phosphor, the first phosphor emits at a shorter wavelength than the second phosphor, the first phosphor has an absorption that decreases toward relatively long wavelengths in the long-wave blue spectral range, and the second phosphor has an absorption maximum in the middle blue spectral range.