An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation of the n-type dopant into the silicon layer as an electronically active dopant. Also provided are a silicon layer including a P-N junction wherein the layer contains an n-type dopant and germanium, and devices such as transistors incorporating an in-situ n-doped silicon layer.