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    2.
    发明专利
    未知

    公开(公告)号：DE69118751T2

    公开(公告)日：1996-10-10

    申请号：DE69118751

    申请日：1991-05-14

    Applicant: IBM

    Inventor： MEYERSON BERNARD STEELE

    IPC: B01J3/03 ,  C23C16/44 ,  C23C16/54 ,  C30B25/14 ,  H01L21/205

    Abstract: An ultra-high vacuum chemical vapor deposition reactor which utilizes only single large diameter, quartz to metal ultra-high vacuum seal or a water cooled "Viton" seal, which is present at a first end of the reactor tube. The other end of the reactor tube has a substantially reduced diameter, and an ultra-high vacuum seal of correspondingly reduced diameter is used at this end. The pumping apparatus and the load station are both located at the first end of the apparatus to provide a single-ended operation. This arrangement obviates problems encountered in the prior art which required the use of two ultra-high vacuum quartz to metal seals at respective ends of the reactor.

    X-RAY LITHOGRAPHIC MASK
    3.
    发明专利
    X-RAY LITHOGRAPHIC MASK 未知

    公开(公告)号：DE3365521D1

    公开(公告)日：1986-10-02

    申请号：DE3365521

    申请日：1983-02-23

    Applicant: IBM

    Inventor： BRADY MICHAEL JOHN ,  MEYERSON BERNARD STEELE ,  WARLAUMONT JOHN MICHAEL

    IPC: C01B33/02 ,  G03F1/22 ,  H01L21/027 ,  G03F1/00

    Abstract: An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375 DEG C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.

    6.
    发明专利
    未知

    公开(公告)号：DE3668391D1

    公开(公告)日：1990-02-22

    申请号：DE3668391

    申请日：1986-09-19

    Applicant: IBM

    Inventor： MEYERSON BERNARD STEELE ,  JOSHI RAJIV VASANT ,  ROSENBERG ROBERT ,  PATEL VISHNUBHAI VITHALBHAI

    IPC: G11B5/66 ,  G11B5/64 ,  G11B5/72

    Abstract: A superior wear-resistant coating is provided for metallic magnetic recording layers (14), where the improved coating is a hard carbon layer (18) that is strongly bound to the underlying metallic magnetic recording layer by an intermediate layer of silicon (16). The silicon layer can be very thin, with a minimum thickness of a few atomic layers, and provides a strong adhesion between the hard carbon protective layer and the metallic magnetic recording layer (14). A preferred technique for depositing both the intermediate silicon (16) layer and the hard carbon layer (18) is plasma deposi­tion, since both of these depositions can be performed in the same reactor without breaking vacuum.

    EPITAXIAL SILICON LAYER AND METHOD TO DEPOSIT SUCH
    8.
    发明专利
    EPITAXIAL SILICON LAYER AND METHOD TO DEPOSIT SUCH 未知

    公开(公告)号：CA2040660C

    公开(公告)日：1996-05-14

    申请号：CA2040660

    申请日：1991-04-17

    Applicant: IBM

    Inventor： MEYERSON BERNARD STEELE

    IPC: H01L21/205 ,  H01L21/22 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L21/20 ,  H01L21/223

    Abstract: An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation of the n-type dopant into the silicon layer as an electronically active dopant. Also provided are a silicon layer including a P-N junction wherein the layer contains an n-type dopant and germanium, and devices such as transistors incorporating an in-situ n-doped silicon layer.

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