The invention discloses a capacitor and a manufacture method thereof, wherein the capacitor comprises a semiconductor lining, a bus, a grounding wire, a first conductive plug, a second conductive plug, a first interlayer dielectric layer, a first electrode, a grounding cushion layer, a second interlayer dielectric layer, a third conductive plug and a second electrode, wherein the bus and the grounding wire are arranged on the surface opposite to a basement of the semiconductor lining, the first conductive plug penetrates through the semiconductor lining and is connected with the bus, the second conductive plug penetrates through the semiconductor lining and is connected with the grounding wire, the first interlayer dielectric layer is arranged on the basement surface of the semiconductor lining, the first electrode penetrates through the first interlayer dielectric layer and is communicated with the first conductive plug, the grounding cushion layer penetrates through the first interlayer dielectric layer and is communicated with the second conductive plug, the second interlayer dielectric layer is arranged on the first interlayer dielectric layer, the first electrode and the grounding cushion layer, the third conductive plug penetrates through the second interlayer dielectric layer and is connected with the grounding cushion layer, and the second electrode is arranged in the second interlayer dielectric layer and is communicated with the third conductive plug. In the invention, the inductance is lowered and the device quality is enhanced.