Reduction of the speed of switching between the drain electrodes of transistors and the cathode electrodes of diodes due to the inductances of lines coupling them is inhibited. Transistors and diodes are formed over a substrate. The transistors and the diodes are arranged in a first direction. The substrate also includes a first line (DAL), first branch lines (DE), and second branch lines (AE) formed thereover. The first line extends between the transistors and the diodes. The first branch lines (DE) are formed to branch from the first line in a direction to overlap the transistors and are coupled to the transistors. The second branch lines (AE) are formed to branch from the first line in a direction to overlap the diodes and are coupled to the diodes.