The invention discloses a transverse diffusion field effect transistor. The transverse diffusion field effect transistor comprises a second-conductive-type-doped buried layer formed in a first-conductive-type-doped drifting region; the buried layer is provided with multiple buried layer sections with different concentrations and different depths; each adjacent two buried layer sections are arranged in a staggered manner longitudinally, so that a JFET effect between a channel region and the drifting region is lowered, and the current conduction region in the drifting region is enlarged when the device is conducted; the doping concentration of the buried layer section nearest to the channel region is greater than that of other buried layer sections; and due to the doping concentration of the buried layer section nearest to the channel region, the auxiliary drifting region on the side face of the channel region can be fully depleted at the initial stage of a drain terminal voltage. The invention also discloses a manufacturing method for the transverse diffusion field effect transistor. By adoption of the transverse diffusion field effect transistor, the low voltage breakdown can be prevented, the breakdown voltage can be increased, the conduction region of the leakage current can be enlarged, and the conduction resistance of the device can be lowered.