Provided is a Hall element integrated on a single substrate capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes: a P-type semiconductor substrate layer (100) formed of P-type silicon; a vertical magnetic field detection N-type doped region (110) formed on the P-type semiconductor substrate layer; and eight horizontal magnetic field detection N-type doped regions (120, 121) formed so as to surround the vertical magnetic field detection N-type doped region (120,121).