A semiconductor laser element is provided with a well layer and the barrier layer comprising a group III-V crystalline semiconductor with as the primary component, a group V element other than as is introduced with a concentration of 0.02-5% at the group V site of the group III-V crystalline semiconductor in the well layer and/or the barrier layer, and Al is included at the III group site of the group III-V crystalline semiconductor in the well layer and/or the barrier layer. Thereby, a semiconductor laser element is provided which suppresses defects from occurring in the bulk crystalline semiconductor and which has less variation of characteristics.