The present invention discloses a silicon electrode production process, which comprises: providing an electric conduction base plate; forming a silicon layer on the electric conduction base plate; and performing a plasma reforming step on the surface of the silicon layer, wherein the plasma reforming step comprises doping a lot of atoms on the surface of the silicon layer, and forming the atom doping layer on the surface. The present invention further discloses a silicon electrode, which comprises an electric conduction base plate, a silicon layer provided with the atom doping layer on the surface and arranged on the electric conduction base plate, and an organic protection film layer arranged on the atom doping layer, wherein the atoms in the atom doping layer arranged on the surface of the silicon layer are nitrogen, phosphorus, boron, or a combination comprising any materials selected from nitrogen, phosphorus and boron, the silicon layer comprises a silicon-based material, an adhesive agent, and an auxiliary conducting agent, and with the atom doping layer on the surface of the silicon layer, the forming of the interface reaction layer can be inhibited, such that the electric capacity and the cycle life of the silicon electrode can be improved.