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CN106169474A 用于制造包括MOS电容器的一次性可编程类型的存储器单元的方法以及对应的集成电路 有权

用于制造包括MOS电容器的一次性可编程类型的存储器单元的方法以及对应的集成电路
Abstract:
本公开涉及用于制造包括MOS电容器的一次性可编程类型的存储器单元的方法以及对应的集成电路。该集成电路包括具有位于埋设绝缘层(30)上方的半导体薄膜(20n,p)的、绝缘体上硅类型的衬底(10)，包括MOS电容器(C)的一次性可编程类型的至少一个存储器单元，所述MOS电容器具有：包括至少部分地硅化(ZSE1)并且由绝缘横向区域(CI1、CI2、CI4和CI5)侧接的栅极区域(G)的第一电极区域(E1)，位于所述栅极区域(G)和所述半导体薄膜(20n和20p)之间的电介质层(OX)，以及包括位于所述绝缘横向区域(CI1、CI2、CI4和CI5)旁边并至少部分地在电介质层(OX)之下延伸的所述半导体薄膜的硅化区域(ZSE2)的第二电极区域(E2)。
Abstract(English):

The disclosure relates to a method for producing one-time-programmable memory cells including MOS capacitors and a corresponding integrated circuit. The integrated circuit includes a silicon on insulator substrate (10) having a semiconductor film (20n, p) located above a buried insulating layer (30), at least one memory cell of the one-time-programmable type including an MOS capacitor (C) having a first electrode region (E1) including a gate region (G) at least partially silicided (ZSE1) and flanked by an insulating lateral region (CI1, CI2, CI4, CI5), a dielectric layer (OX) located between the gate region (G) and the semiconductor film (20n, 20p), and a second electrode region (E2) including a silicided zone (ZSE2) of the semiconductor film, located alongside the insulating lateral region (CI1, CI2, CI4, CI5) and extending at least partially under the dielectric layer (OX).

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