A semiconductor integrated circuit device includes a temperature prediction circuit that predicts the temperature of a power semiconductor device having a built-in switching transistor. The temperature prediction circuit includes: a delay circuit that stores a history of electric power values for a specific number of times, the electric power values being calculated based on the steady loss and switching loss of the switching transistor; and a circuit that calculates the temperature prediction value of the power semiconductor device based on the value of the delay circuit and a time factor corresponding to a temperature heat dissipation characteristic.