To further improve the inverse recovery resistance of a diode element. The present invention is provided with: a drift layer (1) of a first conductivity type; an anode region (3) of a second conductivity type, provided on the drift layer (1); a pull-out region (4) of the second conductivity type, provided in contact with the anode region (3) at a position surrounding the anode region (3); and a field-limiting ring region (6j) of the second conductivity type, provided on the drift layer (1) so as to be set apart from the pull-out region (4) at a position surrounding the pull-out region (4). The pull-out region (4) is configured so as to be deeper than the anode region (3) and the field-limiting ring region (6j).