The invention relates to a Schottky diode. The Schottky diode comprises a semiconductor material, a groove dividing the semiconductor material into an anode zone and a cathode zone, an anode metal layer contacted with the semiconductor material in the anode zone and a cathode metal layer contacted with the semiconductor material in the cathode zone, wherein the groove is annular, the part, close to the cathode zone, in the groove is filled with an insulating medium, one side, close to the anode zone, in the groove forms a gate structure, the gate structure consists of a first gate insulation layer formed by the inner wall of the groove and conductive polycrystalline silicon arranged in the groove, and the conductive polycrystalline silicon is electrically connected with the anode metal layer. The Schottky diode effectively solves the problems of lower reverse bias and larger reverse leakage current.