The invention discloses a super-junction device comprising a trench gate formed at the top of an N-type column with super-junction structure. The doping of a channel region comprises P-type ion implantation impurities formed by P-type ion implantation with inclination angles after the opening of a contact hole corresponding to a source is formed and before metal filling. The longitudinal depth of the implantation peak of the P-type ion implantation is less than or equal to the bottom surface depth of a gate trench. The P-type ion implantation forms a contour structure, at the bottom of the channel region, the depth of which is gradually increased from the bottom of the gate trench to a P-type column. The bottom contour of the channel region causes the collision ionization strongest area of a super-junction device unit to descend from a polysilicon gate side coverage position to the bottom contour region of the channel region, so as to enhance the device EAS capability. The invention also discloses a method for manufacturing the super-junction device. The invention can improve the EAS capability of the device.