The invention discloses a super junction device. The super junction device unit comprises a groove bar gate, formed on the top part of an N-type column; a groove channel is formed on the two sides of the groove bar gate; a source region is formed on the surface of the groove channel, a drain region is formed on the bottom of a super junction structure; a P-type surface buried layer is formed on the bottom of the groove bar gate, the P-type surface buried layer and the bottom of the groove bar gate are in contact, a P-type ring in contact with the P-type surface buried layer is arranged in the charge flow region. When the super junction device reverse breaks down, the P-type surface buried layer forms a path of reverse hole snow slide current, thereby the aggregate capacity of the groove bar gate to the reverse hole snow slide current is reduced to enhance the UIS ability of the device. The invention further discloses a manufacturing method of the super junction device. According to the super junction device, the UIS ability of the device can be improved, the Cgd of the device can be reduced, and the switching losses of the device are reduced, and the process cost is low.