The invention discloses a semiconductor device and its manufacturing method, the semiconductor device includes a substrate; a source electrode doping area, located in the basement; a drain electrode doping area, located in the basement, and the source electrode doped area separated by a predetermined distance; a channel region between the source electrode doping area and the drain electrode doping area; and a gate structure, a channel region, wherein the gate structure includes a gate dielectric layer, a gate conductive layer, and a composite stress oriented layer.