The invention provides a super-junction IGBT (Insulated Gate Bipolar Transistor) device. Forbidden bands of semiconductor materials of emitter regions are wider than other semiconductor regions; and base regions and emitters are connected through a diode or two diodes which are connected in series along the same direction or more diodes which are connected in series along the same direction. Forward switch-on voltages of diode accesses between the base regions and the emitters are smaller than the forward switch-on voltages of hetero-junctions formed in the emitter regions. When forward switch-on is carried out, the diodes between the base regions and the emitters are switched on, potentials of the base regions are raised and few carriers injected from collector regions to voltage resistant regions are prevented from being collected, so the storage effect for the carriers in the voltage resistant regions is improved. Compared with a traditional super-junction IGBT, the super-junction IGBT provided by the invention has the advantage of obtaining lower switch-on voltage reduction.