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Invention Publication
CN107208259A 铬‑钛合金溅射靶材及其制造方法 有权

铬‑钛合金溅射靶材及其制造方法
Abstract:
本发明提供一种能够抑制在溅射时产生的微细颗粒产生的铬‑钛合金溅射靶材及其制造方法。铬‑钛合金溅射靶材的原子比的组成式是以Cr100‑X‑TiX、40≤X≤60表示，剩余部分包含不可避免的杂质，所述杂质中含有合计为1质量ppm以上且50质量ppm以下的Mg、Al、Si、Mn、Ni、Cu及Sn。以及铬‑钛合金溅射靶材的制造方法是将含有合计为1质量ppm以上且50质量ppm以下的Mg、Al、Si、Mn、Ni、Cu及Sn作为杂质的Ti粉末，与含有合计为1质量ppm以上且50质量ppm以下的Mg、Al、Si、Mn、Ni、Cu及Sn作为杂质的Cr粉末混合，并进行加压烧结。
Abstract(English):

Provided are: a Cr-Ti alloy sputtering target material, which is capable of suppressing the generation of fine particles during sputtering; and a method for producing this Cr-Ti alloy sputtering target material. A Cr-Ti alloy sputtering target material which is represented by composition formula Cr100-X-TiX (40 <= X <= 60) in terms of the atomic ratio, with the balance made up of unavoidable impurities that include Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total. A method for producing a Cr-Ti alloy sputtering target material, wherein a Ti powder that contains, as impurities, Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total and a Cr powder that contains, as impurities, Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total are mixed with each other and sintered under pressure.

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