The invention provides an IGBT (Insulated Gate Bipolar Transistor) device. A carrier stored region is arranged between a base region and a drift region; an emitter region adopts a semiconductor material with a higher band gap than other semiconductor regions; the base region and the emitter region form a hetero PN junction with high forward conduction voltage; the base region and the emitter are connected through a diode or two diodes serially connected in the same direction or more than two diodes serially connected in the same direction; and the forward conduction voltage of a diode channel between the base region and the emitter is smaller than that of the hetero PN junction formed between the base region and the emitter region. In the case of forward conduction, the carrier stored region enables the storage effects of minority carriers in the drift region close to the base region to be enhanced, and the diodes between the base region and the emitter enable the storage effects of minority carriers to be further enhanced. Compared with the traditional IGBT device, the IGBT device of the invention can acquire lower conduction voltage drop.