The invention provides a temperature calibrating method of a plasma processing device. The plasma processing device comprises a heater in the plasma processing device. The heater comprises a plurality of controllable independent heating areas. The temperature calibrating method comprises the steps of a plasma processing step, igniting the plasma in a reaction chamber for processing a substrate, and simultaneously stopping operation of a thermal imaging device; and a temperature calibrating step, extinguishing the plasma, detecting the temperature of the upper surface of the whole substrate and obtaining substrate surface temperature distribution, comparing objective process temperature distribution data and the detected substrate surface temperature distribution data by a temperature controller, and controlling a heating driving circuit according to a comparison result so that the substrate surface temperature distribution accords with the objective process temperature distribution.