The invention discloses an electronic heterosynaptic device having a vertical structure and a preparation method thereof. According to the invention, the method herein includes the following steps: using a bottom electrode, a resistive layer and a top electrode to form a MIM nano stack structure, covering an insulating modulation layer, forming a modulating electrode on the insulating modulation layer, the modulating electrode circling the MIM nano stack structure; applying an electronic signal on the modulating electrode, changing the distribution of the electric field intensity in the resistive layer so as to effectively modulate the formation of the conductive filament in the resistive layer and the dynamic process of fusing and also realize heterosynaptic plasticity simulation. Also, according to the invention, the device herein has the advantages of low power consumption and compatibility between preparation technologies and traditional CMOS technologies. Compared with original planar structural devices, the vertical electronic heterosynaptic structure has higher integration and scaling property, and holds important significance to the realization of large-scale brain-like computing hardware.