The invention discloses a manufacturing method of an SOI acceleration sensitive chip based on a bonding technology. The invention is characterized in that the method refers to a manufacturing method of the acceleration sensitive chip or similar sensitive chips and is a technical method for bonding two SOI substrates (A and B) that are separately processed to manufacture the sensitive chip by using a silicon-silicon direct bonding technology. The SOI acceleration sensitive chip has the advantages of high sensitivity, high inherent frequency, good anti-impact performance, small cross coupling coefficients, good repeatability and stability and high temperature resistance, and the manufacturing process is compatible with an IC technology.