The invention provides dry etching equipment, which comprises a process chamber formed by sealing an upper chamber and a lower chamber and used for carrying out various process reactions required by adry etching process under an inductively coupled plasma mode. The upper chamber is internally provided with a plurality of skeletons and suspension columns for supporting the skeletons; a space is formed between two adjacent skeletons and is used for placing a non-conductive current-inducing body; the upper chamber is also internally provided with an antenna coil for forming an alternating current; and an alternating magnetic field or an electric field is induced by the alternating current and is transmitted to the lower chamber to form high-concentration plasma under the inductively coupledplasma mode. The dry etching equipment also comprises a top plate, which is arranged between the upper chamber and the lower chamber and is tightly attached to the current-inducing bodies. The top plate is an aluminum anode member plated with an anode oxide film. The top plate contacted with the plasma is designed to be the aluminum anode member plated with the anode oxide film, thereby improvingmechanical property and heat-conducting property of the top plate, enabling the top plate to be able to realize high temperature control, solving the problem of etching residual caused by product attachment and prolonging production maintenance cycle.