The invention discloses a nitride semiconductor light-emitting diode, and the light-emitting diode comprises an N-type nitride semiconductor, a multiple-quantum well, and a P-type nitride semiconductor. The multiple-quantum well is of a periodic structure which consists of a well layer and a barrier layer. Two sides of the well layer of the multiple-quantum well are respectively provided with a local area quantum-state quantum limiting layer, and each local area quantum-state quantum limiting layer at least consists of four groups of local area quantum-state layers and sub-barrier layers, wherein each group of local area quantum-state layers and sub-barrier layers comprise the first, second, third and fourth local area quantum-state layers and the first, second, third and fourth sub-barrier layers. The local area quantum-state quantum limiting layers at two sides of the sub-barrier layer of each periodic quantum well form a local area quantum state, thereby improving the injection efficiency, limiting effect, quantum size effect and composite efficiency of electrons and holes of the quantum well, and improving the luminous efficiency and the quantum efficiency.