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CN108291843A 具有第一温度测量元件的半导体构件以及用于确定流过半导体构件的电流的方法 有权

  • Patent Title: 具有第一温度测量元件的半导体构件以及用于确定流过半导体构件的电流的方法
  • Patent Title (English): SEMICONDUCTOR COMPONENT COMPRISING A FIRST TEMPERATURE MEASURING ELEMENT AND METHOD FOR DETERMINING A CURRENT FLOWING THROUGH A SEMICONDUCTOR COMPONENT
  • Application No.: CN201680069206.7
    Application Date: 2016-10-05
  • Publication No.: CN108291843A
    Publication Date: 2018-07-17
  • Inventor: J·朱斯 , W·冯埃姆登
  • Applicant: 罗伯特·博世有限公司
  • Applicant Address: 德国斯图加特
  • Assignee: 罗伯特·博世有限公司
  • Current Assignee: 罗伯特·博世有限公司
  • Current Assignee Address: 德国斯图加特
  • Agency: 永新专利商标代理有限公司
  • Agent 郭毅
  • Priority: 102015223470.3 2015.11.26 DE
  • International Application: PCT/EP2016/073733 2016.10.05
  • International Announcement: WO2017/089018 DE 2017.06.01
  • Date entered country: 2018-05-25
  • Main IPC: G01K7/01
  • IPC: G01K7/01 ;  B62D5/04
具有第一温度测量元件的半导体构件以及用于确定流过半导体构件的电流的方法
Abstract:
描述一种半导体构件(10)，其具有衬底和至少两个温度测量元件(20，22)。所述两个温度测量元件(20，22)在所述半导体构件(10)的裸晶片(11)上布置在所述半导体构件(10)内的不同位置上。尤其是，温度测量元件(20)能够布置在所述半导体构件(10)的有源区域(14)中，并且温度测量元件(22)能够布置在所述半导体构件(10)的无源区域(16)中。所述温度测量元件(20，22)测量两个不同的温度TJ、Tsense，借助所述两个不同的温度然后能够计算流过所述半导体构件(10)的电流IDS。所述半导体构件能够是功率MOSFET(18)。此外，描述一种用于确定流过半导体构件(10)的电流IDS的方法，其中，使用在所述半导体构件(10)的不同位置上测量的两个温度。所描述的半导体构件(10)以及所描述的方法例如适合于应用在用于车辆的控制装置中。
Abstract(English):

A semiconductor component (10) comprising a substrate and at least two temperature measuring elements (20, 22) is described. The two temperature measuring elements (20, 22) are arranged on a bare die(11) of the semiconductor component (10) at different positions within the semiconductor component (10). In particular, one temperature measuring element (20) can be arranged in an active region (14)of the semiconductor component (10), and one temperature measuring element (22) can be arranged in a passive region (16) of the semiconductor component (10). The temperature measuring elements (20, 22) measure two different temperatures TJ, Tsense, with the aid of which the current IDS through the semiconductor component (10) can then be calculated. The semiconductor component may be a power MOSFET (18). Furthermore, a method for determining a current IDS flowing through a semiconductor component (10) is described, wherein two temperatures measured at different locations of the semiconductor component (10) are used. The semiconductor component (10) described and the method described are suitable for example for use in a control unit for a vehicle.

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