The invention belongs to the technical field of solar cell manufacturing, in particular to a high-efficiency trapping and selective doping manufacturing method of a full-back electrode battery. Ultra-thin silicon oxide passivation film is prepared by micro-nano structure combined with atomic layer deposition technology to reduce the light reflection and parasitic light absorption on the front surface, while ensuring the passivation of the front surface. In order to solve the problem of large metal area recombination on the back, selective doping is adopted and picosecond laser is utilized on aphosphor doping layer to ensure heavy doping on the surface of n + layer, the depth of heavy doping layer is strictly controlled, which ensures good ohmic contact between phosphorus doped layer and metal contact region, and does not cause serious carrier recombination due to heavy doping. Crystalline silicon is further bulk passivated by ultra-thin silicon oxide passivation followed by low temperature annealing in hydrogen atmosphere. Al metal electrode is fabricated by thermal evaporation method. Under laser irradiation, Al forms good ohmic contact with p + and n + + through silicon oxide.