The invention discloses a surface interface passivation layer of a high-efficiency crystalline silicon solar cell and a passivation method thereof, belonging to the technical field of solar energy manufacturing. An n +-type doping layer is arranged on the front surface of the p-type crystal silicon battery, and the surface of the n +-type doping layer and the surface of the p-type layer on the back surface of the p-type silicon substrate are passivated respectively. Plasma enhanced chemical vapor deposition (PECVD) technique was used to prepare four-layer passivation film on the n + layer of P-type silicon substrate. Plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD) were used to prepare a four-layer passivation film on the p-type layer on the back surfaceof P-type silicon substrate, The structure order of the laminated passivation layer prepared by the patent of the invention has a vital effect on the passivation effect, and the laminated layers havemutual synergistic effect, and after passivation, the laminated passivation layer has excellent anti-reflection effect and good passivation effect, and the laminated passivation layer has excellent application prospect in p-type PERC batteries.