The invention relates to the field of graphene processing, in particular to a method for rapidly preparing patterned doped graphene by ultraviolet laser. The method includes the steps: a preparing carbon source solution; b preparing a carbon source lining plate; c fixedly clamping the carbon source lining plate to a moving platform of a laser processing system and ensuring complete isolation of the carbon source lining plate and air; d processing the carbon source lining plate by laser; e taking out a sample and drying the sample to obtain graphene. An organic carbon layer polyimide coating protected by doped source liquid is processed by ultraviolet laser, chemical bonds of polyimide carbon chains are directly broken by high-energy-density ultraviolet laser, and atoms are doped into reconstructed graphene to generate the patterned doped graphene. The doped graphene generated by the method has energy band gaps, graphene preparation and graphene doping are finished by the same operation, and the method is high in production efficiency and low in cost and has a wide application potential in terms of microelectronic device manufacture.