The invention provides a fabrication method of a thin film transistor, an array substrate and a liquid crystal display panel. The fabrication method of the thin film transistor comprises the followingsteps of forming a Beta-type polyvinylidene fluoride first insulation layer on a gate layer; forming a InGaZnO semiconductor layer on the Beta-type polyvinylidene fluoride first insulation layer; forming a source and a drain on the InGaZnO semiconductor layer; and forming an insulation protection layer on the source and the drain. By the fabrication method, the device reliability can be improved.