A power semiconductor device (1) includes an active cell region (1-2) with a drift region (100), and IGBT cells (1-1) at least partially arranged within the active cell region (1-2). Each IGBT cell (1-1) includes at least one trench (14, 15, 16) extending into the drift region (100) along a vertical direction (Z), an edge termination region (1-3) surrounding the active cell region (1-2), and a transition region (1-5) arranged between the active cell region (1-2) and the edge termination region (1-3). The transition region (1-5) has a width along a lateral direction from the active cell regiontowards the edge termination region. At least some of the IGBT cells are arranged within, or, respectively, extend into the transition region. An electrically floating barrier region of each IGBT cellis arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells. The electrically floating barrier region does not extend into the transition region.