The invention provides a gate control type sampling device based on an LIGBT. A second conduction type semiconductor cathode region is arranged in a first conduction type semiconductor body region; afirst conduction type semiconductor cathode region is arranged on the right side of the second conduction type semiconductor cathode region; a first second conduction type semiconductor doping region,a first conduction type semiconductor doping region adjacent to the first second conduction type semiconductor doping region, and a second second conduction type semiconductor doping region adjacentto the first conduction type semiconductor doping region are sequentially arranged on the right side of the first conduction type semiconductor cathode region; and third metal electrodes are arrangedon the upper surfaces of the second conduction type semiconductor cathode region and the first conduction type semiconductor cathode region. The device can perform sampling on a current flowing through the device in a conducting state, and can detect an anode voltage in a turn-off transient state; the current sampling and the voltage sampling are carried out alternately; and the sampling precisionis high, and the sampling ratio is controllable.