The invention provides a Lateral Schottky Gate Bipolar Transistor (LSGBT) and a manufacturing method thereof. The LSGBT device combines a source drain region of the LIGBT structure with a Schottky gate of the MESFET structure, the Schottky gate is used for replacing an insulated gate, meanwhile, the gate structure of the LSGBT device is similar to the trench gate structure of the conventional MESFET, and the rest part of the LSGBT device is similar to the conventional LIGBT structure. Compared with LIGBT, the LSGBT device structure does not have a parasitic NPN transistor structure, thereby being beneficial to eliminating latch-up effect and enhancing the stability of the device. The grid control mode is changed from an insulated grid to a Schottky grid, so that the complexity of a grid process can be reduced, the problem of oxidation of a wide-band-gap semiconductor material is solved, and the advantages of a voltage control device can be kept, namely that high input impedance is achieved. The LSGBT device is particularly suitable for the field of low-voltage large current.