The invention discloses an InGaN/GaN multiple quantum well solar cell with an AlInGaN barrier layer structure inserted. The solar cell includes a substrate on which a GaN layer and an n-type doped GaNlayer are arranged in turn. A mesa is arranged on one side of the upper surface of the n-type doped GaN layer. A super lattice layer, an undoped GaN buffer layer, an undoped InGaN/GaN multiple quantum well layer, a GaN barrier layer, an AlInGaN barrier layer and a p-type doped GaN layer are arranged in turn on the upper surface of the n-type doped GaN layer. The p-type doped GaN layer is providedwith multiple p-type electrodes which are connected by a transparent electrode layer. The mesa of the n-type doped GaN layer is provided with an n-type electrode. An AlInGaN layer is inserted beforethe epitaxial p-GaN to improve the p-GaN structure, so that the structure has better lattice matching and lower thermal expansion coefficient, the transport efficiency of hole carriers is improved, and the photoelectric conversion rate reaches 1.96%.