The method described is applied to an integrated circuit formed on a substrate (10) of p-type material having at least one region (11) of n-type material with junction insulation, first electrical contact means (20,21) on the frontal surface of the substrate, second electrical contact means (14,14') on the n-type region (11) and third electrical contact means (8) on the back of the substrate connected to a reference (ground) terminal of the integrated circuit. To avoid current in the substrate due to the conduction of parasitic bipolar transistors in certain operating conditions of the integrated circuit, the method provides for monitoring the potential of the second contact means (14,14') to detect if this potential departs from the (ground) potential of the reference terminal by an amount greater than a predetermined threshold value. If this occurs the first contact means (20,21) are taken to the potential of the second contact means (14,14'), otherwise they are held at the (ground)potential of the reference terminal. A device and an integrated circuit which utilise the method are also described.